IP Library Granted Patent US 8,093,698
Granted Patent B2
US 8,093,698 · App. 11/633,844 · Granted Jan 10, 2012

Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device

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Quick Facts
Patent No.
US 8,093,698
App. No.
11/633,844
Filed
Dec 5, 2006
Granted
Jan 10, 2012
Kind
B2
Art Unit
2826
USPC
257/682
Abstract

An electronic device includes a first electrode, a second electrode and an insulating layer between the first and second electrodes, which insulating layer may be susceptible to reduction by H 2 . A gettering layer is provided on and in contact with the first electrode, the gettering layer acting as a protective layer for substantially avoiding reduction of the insulating layer by capturing and immobilizing H 2 . A glue layer may be provided between the gettering layer and first electrode. An additional gettering layer may be provided on and in contact with the second electrode, and a glue layer may be provided between the second electrode and additional gettering layer.

Claims (29)

1. An electronic device comprising:

a first electrode;

a second electrode;

an insulating layer between and in direct contact with the first and second electrodes, wherein the insulating layer comprises an oxide layer, wherein the second electrode and the insulating layer are formed in an opening in a dielectric layer, and wherein the first electrode is above and in contact with the dielectric layer; and

a first and second protective body for substantially avoiding reduction of the insulating layer;

further comprising a first glue layer in direct contact with the first electrode, and a second glue layer in direct contact with the second electrode, the first protective body being in contact with the first glue layer, and the second protective body being in contact with the second glue layer.

2. The electronic device of claim 1 wherein the first and second protective body are gettering layers which capture a reducing agent.

3. The electronic device of claim 1 wherein the insulating layer may be reduced by H 2 , and the first and second protective layers capture H 2 .

4. The electronic device of claim 1 wherein the electronic device is a capacitor.

5. The electronic device of claim 1 wherein the electronic device is a memory device.

6. An electronic device comprising:

a first electrode;

a second electrode;

an oxide layer between the first and second electrodes, which oxide layer may be reduced by H 2 , wherein the second electrode is formed within an opening in a dielectric layer; and wherein the oxide layer is above and in contact with the dielectric layer and

a gettering layer on and in contact with the first electrode covering the top and sides of the first electrode and oxide layer, the gettering layer acting as a protective layer for substantially avoiding reduction of the oxide layer by capturing H 2 .

7. The electronic device of claim 6 wherein the gettering layer comprises Ti.

8. The electronic device of claim 6 wherein the electronic device is a capacitor.

9. The electronic device of claim 6 wherein the electronic device is a memory device.

10. An electronic device comprising:

a first electrode;

a second electrode;

an oxide layer between and in direct contact with the first and second electrodes, which oxide layer may be reduced by H 2 , wherein the second electrode and the oxide layer are formed in an opening in a dielectric layer, and wherein the first electrode is above and in contact with the dielectric layer;

a first glue layer on and in direct contact with the first electrode, and a second glue layer on and in direct contact with the second electrode; and

a first gettering layer on and in contact with the first glue layer, and a second gettering layer on and in contact with the second glue layer, the first and second gettering layers acting as protective layers for substantially avoiding reduction of the oxide layer by capturing H 2 .

11. The electronic device of claim 10 wherein the first and second gettering layers comprise Ti.

12. The electronic device of claim 10 wherein the electronic device is a capacitor.

13. The electronic device of claim 10 wherein the electronic device is a memory device.

14. The electronic device of claim 1 and further comprising said device incorporated in a system.

15. The electronic device of claim 14 wherein the system is selected from the group consisting of a hand-held device, a vehicle, and a computer.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Mar 16, 2022
From: MUFG UNION BANK, N.A.
To: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
Reel/Frame 059410/0438 →
CORRECTIVE ASSIGNMENT TO CORRECT THE 8647899 PREVIOUSLY RECORDED ON REEL 035240 FRAME 0429. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTERST. Recorded Nov 3, 2020
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 058002/0470 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Oct 28, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: MUFG UNION BANK, N.A.
Reel/Frame 050896/0366 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 2, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036050/0514 →
SECURITY INTEREST Recorded Mar 21, 2015
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 035240/0429 →
RELEASE OF SECURITY INTEREST Recorded Mar 13, 2015
From: BARCLAYS BANK PLC
To: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY LLC
Reel/Frame 035201/0159 →
SECURITY AGREEMENT Recorded Jun 4, 2010
From: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY INC.; SPANSION TECHNOLOGY LLC
To: BARCLAYS BANK PLC
Reel/Frame 024522/0338 →