Continuous good step coverage CVD platinum metal deposition
View Patent ↗A method of depositing a platinum based metal film by CVD deposition includes bubbling a non-reactive gas over an organic platinum based metal precursor until the non-reactive gas is saturated with the precursor. The platinum based metal film is deposited onto a substrate in a CVD deposition chamber in the presence of both oxygen and nitrous oxide at a predetermined temperature and under a predetermined pressure. The resulting film is consistently smooth and has good step coverage.
1. A capacitor comprising:
a first electrode and a second electrode, wherein at least one of said first and second electrodes is formed of a material selected from the group consisting of Ru, Rh, Pd, Os, Ir and Pt;
a dielectric provided between said electrodes; and
wherein at least one of said first and second electrodes comprises a uniformly thin and continuous platinum group metal having a uniform thickness of from about 50 Angstroms to about 1000 Angstroms, said platinum group metal deposited in gaseous form onto a substrate in a CVD deposition chamber with a flow rate of from about 50 to about 500 sccm in the presence of an oxygen and nitrous oxide mixture, wherein said mixture has a combined flow rate in the range of from about 1500 sccm to about 2500 sccm.
2. The capacitor according to claim 1 , wherein said at least one of said first and second electrodes is platinum.
3. The capacitor according to claim 2 , wherein said platinum electrode is the lower electrode.
4. A capacitor comprising:
a first electrode and a second electrode, wherein at least one of said first and second electrodes is formed of a material selected from the group consisting of Ru, Rh, Pd, Os, Ir and Pt;
a dielectric provided between said electrodes; and
wherein at least one of said first and second electrodes comprises a uniformly thin and continuous platinum group metal having a uniform thickness of from about 500 Angstroms to about 700 Angstroms, said platinum group metal formed by depositing platinum in a CVD deposition chamber with a flow rate from about 50 to about 500 sccm in the presence of an oxygen and nitrous oxide mixture at a predetermined temperature and at a pressure of from about 10 to about 1000 Torr.
5. The capacitor according to claim 4 , wherein said temperature is from about 2500 C. to about 3000 C.
6. The capacitor according to claim wherein said pressure is from about 15 to about 30 Torr.
7. The capacitor according to claim 4 , wherein said platinum electrode is the lower electrode.
8. The capacitor according to claim 4 , wherein said platinum electrode has a thickness of about 500 angstroms.