Contact hole standard test device
A standard test device used for testing a hole of a semiconductor device includes a dummy film on a base surface, and an insulating layer which has an opening penetrating through the insulating layer, so that a part of a top surface of the dummy film is shown through the opening, wherein the dummy film has a predetermined constant thickness around the opening. The standard test device makes it easily possible to measure a thickness of a residual film on the bottom or the contact hole.
1. A system to measure a thickness of a film in a hole disposed in a semiconductor wafer or in a hole disposed in a layer which is disposed on or above a semiconductor wafer, the system comprising:
an electron gun to irradiate an electron beam on the hole;
an electrode, adapted to receive the semiconductor wafer, to capture or collect a current at a back surface of the semiconductor wafer, wherein the current is generated in response to the electron beam irradiated on the hole; and
a processing unit, coupled to the electrode, to determine the thickness of the film in the hole using the amount of current captured or collected by the electrode.
2. The system of claim 1 further including a current amplifier, coupled to the electrode, to amplify the current and output an amplified current.
3. The system of claim 2 further including a differential amplifier, coupled to the current amplifier, to eliminate an offset current from the amplified current and to output an analog signal.
4. The system of claim 1 further including an analog-to-digital converter, coupled to the differential amplifier, to generate a digital representation of the analog signal, wherein the processing unit uses the digital representation of the analog signal to determine the thickness of the film in the hole.
5. The system of claim 4 further including a comparator, coupled to the analog-to-digital converter, to compare the digital representation of the analog signal to calibration curve data.
6. The system of claim 1 further including a display device to display information which is representative of the thickness of the film in the hole.
7. The system of claim 1 wherein the electron gun irradiates the hole by scanning the electron beam across the hole.
8. The system of claim 1 wherein:
the electron gun irradiates the electron beam at a plurality of electron beam accelerations; and
the electrode captures or collects a plurality of currents, at a back surface of the wafer, wherein each current of the plurality of currents is generated in response to the electron beam having a corresponding one of the plurality of electron beam accelerations.
9. The system of claim 8 wherein the processing unit determines the thickness of the film in the hole using the plurality of currents captured or collected by the electrode.
10. The system of claim 1 wherein the hole is a contact hole or via in a layer of an insulation material on or above the semiconductor wafer.
11. A method to measure a thickness of a film in a hole disposed in a semiconductor wafer or in a hole disposed in a layer, which is disposed on or above a semiconductor wafer, the method comprising:
irradiating the film with an electron beam;
capturing or collecting a current at a back surface of the semiconductor wafer wherein the current is generated in response to the irradiating the film with the electron beam;
determining the thickness of the film using the amount of current captured or collected at the back surface of the semiconductor wafer.
12. The method of claim 11 wherein irradiating the film with an electron beam further includes scanning the electron beam across at least a portion of the film.
13. The method of claim 11 wherein irradiating the film with an electron beam includes irradiating the film with the electron beam at a constant beam angle relative to the surface of the semiconductor wafer.
14. The method of claim 11 wherein irradiating the film with an electron beam includes irradiating the film with an electron beam having a constant electron beam acceleration.
15. The method of claim 11 further including displaying information which is representative of the amount of current captured or collected in response to the electron beam irradiated on the film.
16. The method of claim 11 wherein irradiating the film with an electron beam further includes scanning the electron beam related to semiconductor wafer by moving the semiconductor wafer relative to the electron beam.
17. The method of claim 11 wherein:
irradiating the film with an electron beam further includes irradiating the film with the electron beam having a plurality of electron beam accelerations; and
capturing or collecting a current at a back surface of the semiconductor wafer includes capturing or collecting a plurality of currents at a back surface of the semiconductor wafer, wherein each current of the plurality of currents is generated in response to the electron beam having a corresponding one of the plurality of electron beam accelerations.
18. The method of claim 17 , wherein determining the thickness of the film using the amount of current captured or collected at the back surface of the semiconductor wafer further includes determining the thickness of the film using the plurality of currents captured or collected at the back surface of the semiconductor.
19. A system to measure a thickness of a film, which is comprised of an insulator material and disposed on or above a semiconductor wafer, the system comprising:
an electron gun to irradiate an electron beam on the film;
an electrode, adapted to receive the semiconductor wafer, to capture or collect a current at a back surface of the semiconductor wafer, wherein the current is generated in response to the electron beam irradiated on the film; and
a processing unit, coupled to the electrode, to determine the thickness of the film using the amount of current captured or collected by the electrode.
20. The system of claim 19 further including a current amplifier, coupled to the electrode, to amplify the current and output an amplified current.
21. The system of claim 20 further including a differential amplifier, coupled to the current amplifier, to eliminate an offset current from the amplified current and to output an analog signal.
22. The system of claim 21 further including an analog-to-digital converter, coupled to the differential amplifier, to generate a digital representation of the analog signal and wherein the processing unit uses the digital representation of the analog signal to determine the thickness of the film.
23. The system of claim 22 further including a comparator, coupled to the analog-to-digital converter, to receive the digital representation of the analog signal and to compare the digital representation of the analog signal to calibration curve date.
24. The system of claim 19 wherein the electron gun irradiates the film by scanning the electron beam across at least a portion of the film.
25. The system of claim 19 wherein:
the electron gun irradiates the electron beam at a plurality of electron beam accelerations; and
the processing unit determines the thickness of the film using the amount of current captured or collected by the electrode that is generated in response to the electron beam of each one of the plurality of electron beam accelerations.
26. The system of claim 19 further including an X-Y stage to move the semiconductor wafer relative to the electron beam such that, as the X-Y stage moves the wafer, the electron beam irradiates the film in a scanning manner.
27. The system of claim 19 wherein the film is disposed in a contact hole or via.