Granted Patent
Utility
PCT National Stage
US 6,558,990
· Confirmation No. 6685
SOI SUBSTRATE, METHOD OF MANUFACTURE THEREOF, AND SEMICONDUCTOR DEVICE USING SOI SUBSTRATE
Patented Case
View Patent ↗
Inventors
Masaru Takamatsu
Tokyo, JAPAN
Takashi Katakura
Tokyo, JAPAN
Toshiaki Iwamatsu
Tokyo, JAPAN
Hideki Naruoka
Tokyo, JAPAN
Attorneys & Agents of Record
Classification
USPC
438/151
H10P30/209
H10D86/201
H10D86/01
H10W10/014
H10W10/17
H10W10/181
H10W46/201
H10W46/103
H10W10/061
H10P90/1906
H10W46/00
H10P30/22
H10P90/1908
Prosecution
- Examiner
- LUU, PHO M
- Art Unit
- 2824
- Customer No.
- 26418
- Docket No.
- JG-SU-5045/5
- Confirmation No.
- 6685
Foreign Priority
11-189100
·
1999-07-02
·
JAPAN
Patent Term Adjustment
-182days
CHANGE OF ADDRESS
Recorded 2017-11-29
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2014-10-20
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2001-03-01
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Quick Facts
- Patent No.
- US 6,558,990
- App. No.
- 09/786,228
- Filed
- 2001-03-01
- Granted
- 2003-05-06
- Examiner
- LUU, PHO M
- Art Unit
- 2824
- PTA
- -182 days
External Links