Granted Patent
Utility
US 6,531,349
· Confirmation No. 7679
A METHOD OF ETCHING POLYCRYSTALLINE SILICON FILM BY USING TWO CONSECUTIVE DRY-ETCHING PROCESSES
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⬇ PDF
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-02-21 | TRNA |
Transmittal of New Application | 1 | View | |
| 2001-02-21 | SPEC |
Specification | 18 | View | |
| 2001-02-21 | CLM |
Claims | 1 | View | |
| 2001-02-21 | ABST |
Abstract | 1 | View | |
| 2001-02-21 | DRW |
Drawings-only black and white line drawings | 7 | View | |
| 2001-02-21 | OATH |
Oath or Declaration filed | 1 | View |
Inventors
Kazuyoshi. Yoshida
Tokyo, JAPAN
Nobuyuki Ikezawa
Tokyo, JAPAN
Attorneys & Agents of Record
Classification
USPC
438/197
H10P50/268
H10P50/242
Prosecution
- Examiner
- CHEN, JACK S J
- Art Unit
- 2813
- Customer No.
- 26304
- Docket No.
- NECN 18.362
- Confirmation No.
- 7679
Foreign Priority
2000-43005
·
2000-02-21
·
JAPAN
Publication
- Pub. No.
- US20020115276A1
- Pub. Date
- 2002-08-22
Patent Term Adjustment
-135days
No related applications found.
CHANGE OF ADDRESS
Recorded 2017-11-29
from
NEC CORPORATION
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2003-02-19
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2001-03-30
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Quick Facts
- Patent No.
- US 6,531,349
- App. No.
- 09/790,075
- Filed
- 2001-02-21
- Granted
- 2003-03-11
- Pub. No.
- US20020115276A1
- Examiner
- CHEN, JACK S J
- Art Unit
- 2813
- PTA
- -135 days
External Links