Method for removing organic material from a substrate and for oxidizing oxidizable material thereon
View Patent ↗Embodiments in accordance with the present invention provide for removing organic materials from substrates, for example substrates employed in the fabrication of integrated circuits, liquid crystal displays and the like. Such embodiments also provide for forming self-limiting oxide layers on oxidizable materials disposed on such substrates where such materials are exposed to the methods of the present invention. The methods of the present invention provide for contacting substrates with a solution of ozone, water and a surfactant, the solution being effective for removing organic materials and forming self-limiting oxide layers on oxidizable materials.
1. A method of removing organic materials from a substrate comprising spraying the substrate with a solution comprising ozone, water, and a surfactant within a process chamber, and further comprising providing a gaseous atmosphere comprising a concentration of ozone within the process chamber, the gaseous atmosphere having a pressure in excess of atmospheric pressure.
2. The method of claim 1 , wherein the organic material comprises a layer of organic photoresist.
3. The method of claim 1 , wherein the water is deionized water.
4. The method of claim 1 , wherein the organic material comprises a layer of organic photoresist, and wherein the water is deionized water.
5. The method of claim 1 , wherein the surfactant comprises a non-ionic material.
6. The method of claim 1 , wherein the surfactant comprises a nonionic material selected from the group consisting of an ethoxylated sorbitan monooleate, and functional equivalents of an ethoxylated sorbitan monooleate.
7. The method of claim 1 , wherein the surfactant comprises a quaternary ammonium chloride material.
8. The menthol of claim 1 , wherein the gaseous atmosphere has a pressure approximately twice atmospheric pressure.
9. The method of claim 1 , wherein spraying the substrate further comprises maintaining the solution at a temperature between approximately 20 degrees Celsius (° C.) and approximately 95° C.
10. The method of claim 9 , wherein spraying the substrate further comprises maintaining the solution at a temperature between approximately 80° C. and approximately 95° C.
11. The method of claim 9 , wherein spraying the substrate further comprises maintaining the solution at a temperature between approximately 65° C. and approximately 95° C.
12. The method of claim 11 , wherein the surfactant comprises a quaternary ammonium chloride material.