Fabrication process of a semiconductor device including a CVD process of a metal film

1. A method for fabrication a semiconductor device, comprising:

forming a barrier conductor layer on a substrate;

exposing said barrier conductor layer to a first gas atmosphere containing a hydride gas at an elevated substrate temperature;

forming, after said exposing said barrier conductor layer to said first gas atmosphere, a metal film on said barrier conductor layer by a CVD process; and

exposing said metal film to a second gas atmosphere at an elevated substrate temperature.

2. A method as claimed in claim 1 , wherein said hydride gas is selected from any of silane and ammonia.

3. A method as claimed in claim 1 , wherein said exposing said barrier conductor layer to said first reducing gas atmosphere is conducted at a temperature between 250° C. and 500° C.

4. A method as claimed in claim 1 , wherein said second gas atmosphere includes hydrogen and/or nitrogen.

5. A method as claimed in claim 1 , wherein said step of exposing said metal film to said second gas atmosphere is conducted at a temperature between 250° C. and 500° C.

6. A method as claimed in claim 1 , wherein said metal film is a Cu film.

7. A method as claimed in claim 1 , wherein said barrier conductor layer is formed of any of Ta or TaN.

8. A method of fabricating a semiconductor device, comprising:

forming a barrier conductor layer of any of tungsten nitride or tantalum nitride on a substrate;

exposing said barrier conductor layer to an atmosphere containing a hydride gas at an elevated temperature; and

forming, after exposing said barrier conductor layer to said atmosphere containing the hydride gas, a metal film on said barrier conductor layer by a CVD process.

9. A method as claimed in claim 8 , wherein said hydride gas is at least one of silane and ammonia.

10. A method as claimed in claim 8 , further comprising, after said forming said metal film, applying a thermal annealing process to said metal film.

11. A method as claimed in claim 10 , wherein said thermal annealing process is conducted at a temperature between 250° C. and 500° C.

12. A method as claimed in claim 8 , wherein said metal film is formed of Cu.

13. A method of fabricating a semiconductor device, comprising:

alternately and repeatedly forming, on a substrate, an insulating film, a barrier conductor layer of any of tungsten nitride and tantalum nitride, and a metal film, said metal film being formed by a CVD process,

wherein a step of exposing said barrier conductor film to an atmosphere containing a hydride gas at an elevated temperature is interposed between said step of forming said barrier conductor layer and said step of forming said metal film.

14. A method as claimed in claim 1 , wherein said step of forming said barrier conductor layer is conducted by a PVD process.

15. A method as claimed in claim 1 , wherein said second reducing gas atmosphere includes nitrogen.

16. A method as claimed in claim 5 , wherein said step of exposing said metal film to said second gas atmosphere is conducted under a pressure of about 40 Pa.

17. A method for fabrication a semiconductor device, comprising:

forming a barrier conductor layer on a substrate;

exposing said barrier conductor layer to a first gas atmosphere containing a nitrogen gas at an elevated substrate temperature;

forming, after said exposing said barrier conductor layer to said first gas atmosphere, a metal film on said barrier conductor layer by a CVD process; and

exposing said metal film to a second gas atmosphere at an elevated substrate temperature.

18. A method as claimed in claim 17 , wherein said exposing said barrier conductor layer to said first reducing gas atmosphere is conducted at a temperature between 250° C. and 500° C.

19. A method as claimed in claim 17 , wherein said second gas atmosphere comprises at least one of hydrogen, nitrogen, or a combination of hydrogen and nitrogen.

20. A method as claimed in claim 17 , wherein said exposing said metal film to said second gas atmosphere is conducted at a temperature between 250° C. and 500° C.

21. A method as claimed in claim 17 , wherein said metal film is a Cu film.

22. A method as claimed in claim 17 , wherein said barrier conductor layer is formed of any of Ta or TaN.

23. A method as claimed in claim 17 , wherein said forming said barrier conductor layer is conducted by a PVD process.

24. A method as claimed in claim 17 , wherein said second reducing gas atmosphere includes nitrogen.

25. A method of fabricating a semiconductor device, comprising:

forming a barrier conductor layer of any of tungsten nitride or tantalum nitride on a substrate;

exposing said barrier conductor layer to an atmosphere containing a nitrogen gas at an elevated temperature; and

forming, after exposing said barrier conductor layer to said atmosphere containing the nitrogen gas, a metal film on said barrier conductor layer by a CVD process.

26. A method as claimed in claim 25 , further comprising, after forming said metal film, applying a thermal annealing process to said metal film.

27. A method as claimed in claim 26 , wherein said thermal annealing process is conducted at a temperature between 250° C. and 500° C.

28. A method as claimed in claim 25 , wherein said metal film is formed of Cu.

29. A method of fabricating a semiconductor device, comprising:

alternately and repeatedly forming, on a substrate, an insulating film, a barrier conductor layer of any of tungsten nitride and tantalum nitride, and a metal film, said metal film being formed by a CVD process,

wherein a step of exposing said barrier conductor film to an atmosphere containing a nitrogen gas at an elevated temperature is interposed between said step of forming said barrier conductor layer and said step of forming said metal film.