IP Library › Granted Patent US 6,593,191
Granted Patent Utility
US 6,593,191 · Confirmation No. 2854

BURIED CHANNEL STRAINED SILICON FET USING A SUPPLY LAYER CREATED THROUGH ION IMPLANTATION

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2010-04-02 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
2010-04-02 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
2010-03-25 PA.. Power of Attorney 1 View
2010-03-25 R3.73 Assignee showing of ownership per 37 CFR 3.73 1 View
2010-03-25 N417 Electronic Filing System Acknowledgment Receipt 2 View
2005-03-10 EBCC.AD Notice of Change of Address Place in File Wrapper Due to Electronic Business Center(EBC) Customer Number Update 1 View
2001-10-01 TRNA Transmittal of New Application 3 View
2001-10-01 DRW Drawings-only black and white line drawings 12 View
2001-05-16 TRNA Transmittal of New Application 3 View
2001-05-16 SPEC Specification 15 View
2001-05-16 CLM Claims 5 View
2001-05-16 ABST Abstract 1 View
2001-05-16 DRW Drawings-only black and white line drawings 12 View
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Quick Facts
Patent No.
US 6,593,191
App. No.
09/859,137
Filed
2001-05-16
Granted
2003-07-15
Pub. No.
US20020052084A1
Art Unit
2822
PTA
-257 days