Granted Patent
Utility
US 6,525,338
· Confirmation No. 2096
SEMICONDUCTOR SUBSTRATE, FIELD EFFECT TRANSISTOR, METHOD OF FORMING SIGE LAYER AND METHOD OF FORMING STRAINED SI LAYER USING SAME, AND METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-07-31 | TRNA |
Transmittal of New Application | 2 | View | |
| 2001-07-31 | ADS |
Application Data Sheet | 2 | View | |
| 2001-07-31 | SPEC |
Specification | 26 | View | |
| 2001-07-31 | CLM |
Claims | 4 | View | |
| 2001-07-31 | ABST |
Abstract | 1 | View | |
| 2001-07-31 | DRW |
Drawings-only black and white line drawings | 7 | View | |
| 2001-07-31 | OATH |
Oath or Declaration filed | 3 | View |
Inventors
Kazuki Mizushima
Saitama-shi, JAPAN
Ichiro Shiono
Saitama-shi, JAPAN
Kenji Yamaguchi
Saitama-shi, JAPAN
Attorneys & Agents of Record
Classification
USPC
257/19
H10D30/751
H10P10/00
H10D30/0516
H10D30/798
H10P14/3254
H10P14/3211
H10P14/3251
H10P14/2905
H10P14/3411
Prosecution
- Examiner
- TRAN, TAN N
- Art Unit
- 2826
- Customer No.
- 22850
- Docket No.
- 212103US0X
- Confirmation No.
- 2096
Foreign Priority
2000-233640
·
2000-08-01
·
JAPAN
2001-165695
·
2001-05-31
·
JAPAN
Publication
- Pub. No.
- US20020017642A1
- Pub. Date
- 2002-02-14
Patent Term Adjustment
0days
No related applications found.
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2011-10-05
CHANGE OF NAME
Recorded 2011-04-05
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2002-12-30
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Quick Facts
- Patent No.
- US 6,525,338
- App. No.
- 09/917,923
- Filed
- 2001-07-31
- Granted
- 2003-02-25
- Pub. No.
- US20020017642A1
- Examiner
- TRAN, TAN N
- Art Unit
- 2826
- PTA
- 0 days
External Links