IP Library Granted Patent US 6,534,375
Granted Patent Utility
US 6,534,375 · Confirmation No. 2394

METHOD OF FORMING A CAPACITOR IN A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING A METAL SILICON NITRIDE LAYER TO PROTECT AN UNDERLYING METAL SILICIDE LAYER FROM OXIDATION DURING SUBSEQUENT PROCESSING STEPS

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Code Description Pages PDF
2020-06-11 OATH Oath or Declaration filed 262 View
2001-08-08 TRNA Transmittal of New Application 4 View
2001-08-08 A.PE Preliminary Amendment 2 View
2001-08-08 SPEC Specification 103 View
2001-08-08 CLM Claims 18 View
2001-08-08 ABST Abstract 1 View
2001-08-08 DRW Drawings-only black and white line drawings 127 View
2001-08-08 OATH Oath or Declaration filed 5 View
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Quick Facts
Patent No.
US 6,534,375
App. No.
09/923,406
Filed
2001-08-08
Granted
2003-03-18
Pub. No.
US20020022357A1
Art Unit
2813
PTA
0 days