Slurry for chemical mechanical polishing and method of manufacturing semiconductor device
View Patent ↗A method of manufacturing a semiconductor device uses a slurry for chemical polishing during the manufacturing process, the slurry containing polishing particles comprising colloidal particles whose primary particles have a diameter ranging from 5 to 30 nm, wherein the degree of association of the primary particles is 5 or less. This slurry for chemical mechanical polishing makes it possible to minimize erosion and scratching whenever a conductive material film is subjected to CMP treatment.
1. A method of manufacturing a semiconductor device, which comprises:
forming a wiring groove on a surface of an insulating film formed above a semiconductor substrate;
depositing a conductive material film on a surface of said insulating film including an inner surface of said wiring groove; and
subjecting said conductive material film to a chemical mechanical polishing by making use of a slurry for chemical mechanical polishing, which contains polishing particles comprising first colloidal silica particles whose primary particles have a diameter ranging from 5to 20 nm, and second colloidal silica particles whose primary particles have a diameter ranging from 20 nm to 50 nm, wherein the weight ratio of the first colloidal silica particles is in the range of 0.6 to 0.9 based on a total weight of said first and second colloidal silica particles to remove said conductive material film excluding a conductive material film portion which is buried in said wiring groove.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein said conductive material film is a wiring material film.
3. The method of manufacturing a semiconductor device according to claim 2 , wherein said wiring material film is a copper film.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein said conductive material film as a laminate film composed of two or more layers comprising a conductive barrier film made of at least one kind of materials selected from the group consisting of TiN, Ti, Nb, XV, WN, TaN, TaSiN, Ta, V, Mo, Zr and ZrN, and a wiring material film laminated on said barrier film, said wiring material film being subjected to said chemical mechanical polishing by making use of the slurry for chemical mechanical polishing.
5. The method of manufacturing a semiconductor device according to claim 4 , wherein said wiring material film is subjected to a chemical mechanical polishing by making use of said slurry for chemical mechanical polishing, which contains polishing particles comprising first colloidal silica particles whose primary particles have a diameter ranging from 5 to 20 nm, and second colloidal silica particles whose primary particles have a diameter ranging from 20 to 50 wherein the weight ratio of the first colloidal silica particles is in the range of 0.6 to 0.9 based on a total weight of said first and second colloidal silica particles, and said conductive barrier film is subjected to a chemical mechanical polishing by making use of a slurry for chemical mechanical polishing, which contains polishing particles comprising colloidal silica particles whose primary particles have a diameter ranging from 5 to 30 nm, wherein the degree of association of the primary particles is 5 or less.
6. The method of manufacturing a semiconductor device according to claim 1 , wherein said conductive material film is a laminate film composed of two or more layers comprising a conductive barrier film made of at least one kind of materials selected from the group consisting of TiN, Ti, Nb, W, WN, TaN, TaSiN, Ta, V, Mo, Zr and ZrN, and a wiring material film laminated on said barrier film, said laminate film being subjected to said chemical mechanical polishing by making use of said slurry for chemical mechanical polishing, which includes third particles formed of a material different from those of the first and second colloidal Silica particles, to remove said conductive material film excluding a conductive material film portion which is buried in said wiring groove.
7. The method of manufacturing semiconductor device according to claim 6 , wherein said third particles arc colloidal alumina particles.
8. The method of manufacturing a semiconductor device according to claim 1 , wherein said polishing particles are incorporated in said slurry at a ratio of 0.5 to 5% by weight.
9. The method of manufacturing a semiconductor device according to claim 1 , wherein said slurry further contains an oxidizing agent and an oxidation inhibitor.
10. The method of manufacturing a semiconductor device according to claim 1 , wherein said slurry further contains a surfactant.
11. The method of manufacturing a semiconductor device according to claim 10 , wherein said surfactant is dodecyl benzene sulfonate.
12. A method of manufacturing a semiconductor device, which comprises:
forming a wiring groove on a surface of an insulating film formed above a semiconductor substrate;
depositing a conductive barrier film on a surface of said insulating film including an inner surface of said wiring groove;
depositing a wiring material film on said conductive barrier film to fill said wiring groove with said wiring material film;
subjecting said wiring material film to a chemical mechanical polishing to remove said wiring material film excluding a wiring material film portion which is buried in said wiring groove, said chemical mechanical polishing taking place, with the conductive barrier film on said insulating film being employed as a stopper, except for a conductive barrier film portion located inside said wiring groove; and
subjecting a conductive barrier film portion which is located on said insulating film excluding said wiring groove to a chemical mechanical polishing by making use of a slurry for chemical mechanical polishing, which contains polishing particles comprising first colloidal silica particles whose primary particles have a diameter ranging from 5to 20 nm, and second colloidal silica particles whose primary particles have a diameter ranging from 20 nm to 50 nm, wherein the weight ratio of the first colloidal silica particles is in the range of 0.6 to 0.9 based on a total weight of said first and second colloidal silica particles.
13. The method of manufacturing a semiconductor device according to claim 12 , wherein said insulating film is a porous film or an organic film, each exhibiting a lower dielectric constant as compared with that of SiO 2 .
14. The method of manufacturing a semiconductor device according to claim 12 , wherein said conductive barrier film is composed of one or more layers made of a material selected from the group consisting of TiN, Ti, Nb, W, WN, TaN, TaSiN, Ta, V, Mo, Zr and ZrN.
15. The method of manufacturing a semiconductor device according to claim 12 , wherein said polishing particles are incorporated in said slurry at a ratio of 0.5 to 5% by weight.
16. The method of manufacturing a semiconductor device according to claim 12 , wherein said slurry further contains an oxidizing agent and an oxidation inhibitor.
17. The method of manufacturing a semiconductor device according to claim 12 , wherein said slurry further contains a surfactant.
18. The method of manufacturing a semiconductor device according to claim 17 , wherein said surfactant is dodecyl benzene sulfonate.
19. The method of manufacturing a semiconductor device according to claim 12 , wherein said slurry further contains third particles which are formed of a different material from that of the first and second colloidal silica particles.
20. The method of manufacturing a semiconductor device according to claim 19 , wherein said third particles are colloidal alumina particles.