IP Library › Granted Patent US 6,624,471
Granted Patent Utility
US 6,624,471 · Confirmation No. 4332

LATERAL DMOS TRANSISTOR WITH FIRST AND SECOND DRAIN ELECTRODES IN RESPECTIVE CONTACT WITH HIGH-AND LOW-CONCENTRATION PORTIONS OF A DRAIN REGION

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 Code Description Pages PDF
2003-07-18 LET. Miscellaneous Incoming Letter 2 View
2003-07-18 DRW Drawings-only black and white line drawings 3 View
2003-07-18 IFEE Issue Fee Payment (PTO-85B) 1 View
2003-07-18 LET. Miscellaneous Incoming Letter 2 View
2003-07-18 FOR Foreign Reference 22 View
2001-09-20 TRNA Transmittal of New Application 1 View
2001-09-20 SPEC Specification 6 View
2001-09-20 CLM Claims 5 View
2001-09-20 ABST Abstract 1 View
2001-09-20 DRW Drawings-only black and white line drawings 3 View
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Quick Facts
Patent No.
US 6,624,471
App. No.
09/960,254
Filed
2001-09-20
Granted
2003-09-23
Pub. No.
US20020040995A1
Art Unit
2826
PTA
-128 days