Granted Patent
Utility
US 6,503,563
· Confirmation No. 3285
METHOD OF PRODUCING POLYCRYSTALLINE SILICON FOR SEMICONDUCTORS FROM SILANE GAS
Patented Case
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-10-09 | TRNA |
Transmittal of New Application | 3 | View | |
| 2001-10-09 | SPEC |
Specification | 19 | View | |
| 2001-10-09 | CLM |
Claims | 1 | View | |
| 2001-10-09 | ABST |
Abstract | 1 | View | |
| 2001-10-09 | DRW |
Drawings-only black and white line drawings | 4 | View | |
| 2001-10-09 | OATH |
Oath or Declaration filed | 4 | View |
Inventors
Yoshifumi Yatsurugi
Fujisawa-shi, JAPAN
Shinichiro Inoue
Hiratsuka-shi, JAPAN
Attorneys & Agents of Record
Classification
USPC
427/255.27
Prosecution
- Examiner
- FLETCHER III, WILLIAM P
- Art Unit
- 1762
- Customer No.
- 23850
- Docket No.
- 011242
- Confirmation No.
- 3285
Patent Term Adjustment
-90days
No related applications found.
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2012-03-08
from
KOMATSU LTD.
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2003-12-23
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2001-10-09
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Quick Facts
- Patent No.
- US 6,503,563
- App. No.
- 09/971,801
- Filed
- 2001-10-09
- Granted
- 2003-01-07
- Examiner
- FLETCHER III, WILLIAM P
- Art Unit
- 1762
- PTA
- -90 days
External Links