Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
View Patent ↗A system and sequential method for integrated, in-situ modification of a substrate and subsequent atomic layer deposition of a thin film onto the substrate in an evacuated chamber includes introducing at least one feed gas into the chamber; generating a plasma from the feed gas; exposing said substrate to ions and/or radicals formed by the plasma; modulating any ions; reacting the substrate with said modulated ions and/or radicals to remove any contaminants from the substrate and producing a modified substrate. These steps are followed, in-situ, by performing an atomic layer deposition of a thin film onto the modified substrate in the chamber including introducing a first reactant gas into said chamber; adsorbing at least one monolayer of the first reactant gas onto the modified substrate; evacuating any excess first reactant gas from the chamber; introducing at least one additional feed gas into the chamber, generating a second plasma from the additional feed gas; exposing the modified substrate to additional ions and/or radicals formed by the plasma; modulating any additional ions; and reacting the adsorbed monolayer of the first reactant gas with any modulated additional ions and/or radicals to deposit the thin film.
1. A sequential method for integrated, in-situ modification of a substrate and subsequent atomic layer deposition of a thin film onto said substrate in an evacuated chamber beginning with initial modification steps, comprising:
introducing at least one first ion generating feed gas into said evacuated chamber;
generating a plasma from said first ion generating feed gas to form ions;
exposing said substrate to said ions;
modulating said ions;
reacting said substrate with said modulated ions to remove any contaminants from said substrate and producing a modified substrate; and
following said initial modification steps, performing an atomic layer deposition of a thin film onto said modified substrate in said evacuated chamber including:
introducing a first reactant gas into said evacuated chamber;
adsorbing at least one monolayer of said first reactant gas onto said modified substrate;
evacuating any excess said first reactant gas from said evacuated chamber;
introducing at least one additional ion generating feed gas into said evacuated chamber;
generating a second plasma from said additional ion generating feed gas to form additional ions;
exposing said modified substrate to said additional ions;
modulating said additional ions; and
reacting said adsorbed monolayer of said first reactant gas with said modulated additional ions to deposit said thin film.
2. The sequential method of claim 1 wherein said initial modification steps are cleaning steps.
3. The sequential method of claim 1 wherein said initial modification steps are surface treatment steps.
4. The sequential method of claim 1 wherein said initial modification steps additionally include introducing at least one radical generating feed gas into said evacuated chamber and generating a plasma from said radical generating feed gas to form radicals.
5. The sequential method of claim 1 wherein said atomic layer deposition steps additionally include introducing at least one radical generating feed gas into said evacuated chamber and generating a plasma from said radical generating feed gas to form radicals.
6. The sequential method of claim 1 wherein said contaminants comprise native oxides, metal oxides, particulate contamination, and carbon-containing impurities.
7. The sequential method of claim 1 , wherein said ion modulation is modulated in a way selected from the group consisting of modulating an ion flux and modulating an ion energy.
8. The sequential method of claim 1 , further comprising electrically biasing said substrate to a negative potential.
9. The sequential method of claim 8 , wherein said electrical bias is induced by a radio frequency power supply.
10. The sequential method of claim 8 , wherein a magnitude of said electrical bias during said initial cleaning steps is lower than a magnitude of said electrical bias during said atomic layer deposition steps.
11. The sequential method of claim 1 wherein said method is repeated for each film deposition layer.
12. The sequential method of claim 1 wherein a barrier material film is deposited following said initial modification steps.
13. The sequential method of claim 1 wherein a copper seed layer is deposited following said initial modification steps.
14. A sequential method for integrated, in-situ modification of a substrate and subsequent atomic layer deposition of a thin film onto said substrate in an evacuated chamber beginning with initial modification steps, comprising:
introducing at least one first radical generating feed gas into said evacuated chamber;
introducing at least one ion generating feed gas into said chamber;
generating a plasma from said first radical generating feed gas to form radicals;
exposing said substrate to said radicals;
reacting said substrate with said radicals to remove any contaminants from said substrate and producing a modified substrate; and
following said initial modification steps, performing an atomic layer deposition of a thin film onto said modified substrate in said evacuated chamber including:
introducing a first reactant gas into said evacuated chamber;
adsorbing at least one monolayer of said first reactant gas onto said modified substrate;
evacuating any excess said first teactant gas from said evacuated chamber;
introducing at least one additional radical generating feed gas into said evacuated chamber;
generating a second plasma from said additional radical generating feed gas to form additional radicals;
exposing said modified substrate to said additional radicals; and
reacting said adsorbed monolayer of said first reactant gas with said additional radicals to deposit said thin film.
15. A sequential method for integrated, in-situ modification of a substrate and subsequent atomic layer deposition of a thin film onto said substrate in an evacuated chamber beginning with initial modification steps, comprising:
introducing at least one first radical generating feed gas into said evacuated chamber;
generating a plasma from said first radical generating feed gas to form radicals;
exposing said substrate to said radicals;
reacting said substrate with said radicals to remove any contaminants from said substrate and producing a modified substrate; and
following said initial modification steps, performing an atomic layer deposition of a thin film onto said modified substrate in said evacuated chamber including:
introducing a first reactant gas into said evacuated chamber;
adsorbing at least one monolayer of said first reactant gas onto said modified substrate;
evacuating any excess said first reactant gas from said evacuated chamber;
introducing at least one additional radical generating feed gas into said evacuated chamber;
generating a second plasma from said additional radical generating feed gas to form additional radicals;
exposing said modified substrate to said additional radicals;
reacting said adsorbed monolayer of said first reactant gas with said additional radicals to deposit said thin film; and
repeating each of the aforementioned steps for each film deposition layer.
16. The sequential method of claim 1 wherein said additional radical generating feed gas is the same feed gas as said first radical generating feed gas.
17. The sequential method of claim 14 wherein said additional radical generating feed gas is the same feed gas as said first radical generating feed gas.
18. The sequential method of claim 15 wherein said additional radical generating feed gas is the same feed gas as said first radical generating feed gas.