Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
View Patent ↗The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a neutral to weakly acidic polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a neutral to weakly acidic polymerization inhibitor. A free radical scavenger can also be included in the process and composition.
1. A process for stabilizing a cyclotetrasiloxane against polymerization, the cyclotetrasiloxane having the following formula:
wherein R 1-7 are individually selected from the group consisting of hydrogen, a normal, branched or cyclic C 1-10 alkyl group, and a C 1-4 alkoxy group, the process comprising:
providing an effective amount of an inhibitor to the cyclotetrasiloxane wherein the inhibitor is selected from 2,4-pentanedione; 1-hexanoic acid; glycerol; acetic anhydride; β-diketones RC(O)CH 2 C(O)R; aliphatic carboxylic acids RCOOH; aliphatic dicarboxylic acids HOOC—(CH 2 ) n —COOH in which 1≦n≦8; phenols C 6 R (6-n) (OH) n in which 1≦n≦5; polyols CH 2 X(CHX) n CH 2 X, in which X=H or OH but at least one X=OH and 1≦n≦8; anhydrides RCH 2 —C(O)—O—C(O)—CH 2 R; hydrodosiloxanes R 3 Si—(O—SiR 2 ) n OSiR 3 , in which 0≦n≦8, all wherein R is individually selected from the group consisting of hydrogen, normal, branched or cyclic C 1-10 alkyl groups; and mixtures thereof.
2. The process of claim 1 including providing a free radical scavenger to said cyclotetrasiloxane.
3. The process of claim 2 wherein said free radical scavenger is selected from the group consisting of: 2,6-di-tert-butyl-4-methyl phenol, 2,2,6,6-tetramethyl-1-piperidinyloxy, 2-tert-butyl-4-hydroxyanisole, 3-tert-butyl-4-hydroxyanisole, propyl ester 3,4,5-trihydroxy-benzoic acid, 2-(1,1-dimethylethyl)-1,4-benzenediol, diphenylpicrylhydrazyl, 4-tert-butylcatechol, N-methylaniline, p-methoxydiphenylamine, diphenylamine, N,N′-diphenyl-p-phenylenediamine, p-hydroxydiphenylamine, phenol, octadecyl-3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, tetrakis(methylene(3,5-di-tert-butyl)-4-hydroxy-hydrocinnamate)methane, phenothiazines, alkylamidonoisoureas, thiodiethylene bis(3,5,-di-tert-butyl-4-hydroxy-hydrocinnamate, 1,2,-bis(3,5-di-tert-butyl-4-hydroxyhydrocinnamoyl)hydrazine, tris(2-methyl-4-hydroxy-5-tert-butylphenyl)butane, cyclic neopentanetetrayl bis(octadecyl phosphite), 4,4′-thiobis(6-tert-butyl-m-cresol), 2,2′-methylenebis(6-tert-butyl-p-cresol), oxalyl bis(benzylidenehydrazide) and mixtures thereof.
4. The process of claim 3 wherein said 2,6-di-tert-butyl-4-methyl phenol is provided in an amount of 50-500 ppm (vol.).
5. The process of claim 3 wherein said 2,2,6,6-tetramethyl-1-piperidinyloxy is provided in an amount of 50-230 ppm (vol.).
6. A process for stabilizing 1,3,5,7-tetramethylcyclotetrasiloxane that is used in a chemical vapor deposition process against polymerization during extended periods of heating, the process comprising: providing a free radical scavenger to said 1,3,5,7-tetramethylcyclotetrasiloxane.
7. The process of claim 6 wherein said free radical scavenger is selected from the group consisting of 2,6-di-tert-butyl-4-methyl phenol, 2,2,6,6-tetramethyl-1-piperidinyloxy and mixtures thereof.
8. The process of claim 7 wherein said scavenger is provided in an amount of 50-500 ppm (vol.).
9. The process of claim 7 wherein said 2,2,6,6-tetramethyl-1-piperidinyloxy is provided in an amount of 50-230 ppm (vol.).
10. A process for stabilizing 1,3,5,7-tetramethylcyclotetrasiloxane against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing a neutral to weakly acidic polymerization inhibitor to said 1,3,5,7-tetramethylcyclotetrasiloxane and providing a free radical scavenger to said 1,3,5,7-tetramethylcyclotetrasiloxane.
11. The process of claim 10 wherein said inhibitor is selected from the group consisting of 2,4-pentanedione, 1-hexanoic acid, glycerol, acetic anhydride, less than 1% (vol.) 1,1,1,5,5,5-hexamethyltrisiloxane and mixtures thereof.
12. The process of claim 10 wherein said free radical scavenger is selected from the group consisting of 2,6-di-tert-butyl-4-methyl phenol, 2,2,6,6-tetramethyl-1-piperidinyloxy and mixtures thereof.
13. A composition of 1,3,5,7-tetramethylcyclotetrasiloxane, used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, stabilized against polymerization, comprising 1,3,5,7-tetramethylcyclotetrasiloxane and a neutral to weakly acidic polymerization inhibitor and a free radical scavenger.
14. A composition of 1,3,5,7-tetramethylcyclotetrasiloxane, used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, stabilized against polymerization, comprising (a) 1,3,5,7-tetramethylcyclotetrasiloxane, (b) a neutral to weakly acidic polymerization inhibitor selected from the group consisting of 2,4-pentanedione; 1-hexanoic acid; glycerol; acetic anhydride; less than 1% (vol.) 1,1,1,5,5,5-hexamethyltrisiloxane; less than 1% (vol.) 1,1,1,3,5,5,5-heptamethyltrisiloxane; β-diketones RC(O)CH 2 C(O)R; aliphatic carboxylic acids RCOOH; aliphatic dicarboxylic acids HOOC—(CH 2 )—COOH in which 1≦n≦8; phenols C 6 R (6-n) (OH) n in which 1≦n≦5; polyols CH 2 X(CHX) n CH 2 X, in which X=H or OH but at least one X=OH and 1≦n≦8; anhydrides RCH 2 —C(O)—O—C(O)—CH 2 R; hydrodosiloxanes R 3 Si—(O—SiR 2 ) n —OSiR 3 , in which 0≦n≦8, all wherein R is individually selected from the group consisting of hydrogen, normal, branched or cyclic C 1-10 alkyl groups; and mixtures thereof, and (c) a free radical scavenger selected from the group consisting of 2,6-di-tert-butyl-4-methyl phenol, 2,2,6,6-tetramethyl-1-piperidinyloxy, 2-tert-butyl-4-hydroxyanisole, 3-tert-butyl-4-hydroxyanisole, propyl ester 3,4,5-trihydroxy-benzonic acid, 2-(1,1-dimethylethyl)-1,4-benzenediol, diphenylpicrylhydrazyl, 4-tert-butylcatechol, N-methylaniline, p-methoxydiphenylamine, diphenylamine, N,N′-diphenyl-p-phenylenediamine, p-hydroxydiphenylamine, phenol, octadecyl-3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, tetrakis(methylene(3,5-di-tert-butyl)-4-hydroxy-hydrocinnamate)methane, phenothiazines, alkylamidonoisoureas, thiodiethylene bis(3,5,-di-tert-butyl-4-hydroxy-hydrocinnamate, 1,2,-bis(3,5-di-tert-butyl-4hydroxyhydrocinnamoyl)hydrazine, tris(2-methyl-4-hydroxy-5-tert-butylphenyl)butane, cyclic neopentanetetrayl bis(octadecyl phosphite), 4,4′-thiobis(6-tert-butyl-m-cresol), 2,2′-methylenebis(6-tert-butyl-p-cresol), oxalyl bis(benzylidenehydrazide) and mixtures thereof.
15. A composition of 1,3,5,7-tetramethylcyclotetrasiloxane, used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, stabilized against polymerization, comprising 1,3,5,7-tetramethylcyclotetrasiloxane, and 2,4-pentanedione.
16. A composition of 1,3,5,7-tetramethylcyclotetrasiloxane, used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, stabilized against polymerization, comprising 1,3,5,7-tetramethylcyclotetrasiloxane, and 1-hexanoic acid.
17. A composition of 1,3,5,7-tetramethylcyclotetrasiloxane, used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, stabilized against polymerization, comprising 1,3,5,7-tetramethylcyclotetrasiloxane, and glycerol.
18. A composition of 1,3,5,7-tetramethylcyclotetrasiloxane, used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, stabilized against polymerization, comprising 1,3,5,7-tetramethylcyclotetrasiloxane, and acetic anhydride.
19. A composition of 1,3,5,7-tetramethylcyclotetrasiloxane, used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, stabilized against polymerization, comprising 1,3,5,7-tetramethylcyclotetrasiloxane, 2,4-pentanedione and a free radical scavenger selected from the group consisting of 2,6-di-tert-butyl-4-methyl phenol, 2,2,6,6-tetramethyl-1-piperidinyloxy and mixtures thereof.
20. A composition of 1,3,5,7-tetramethylcyclotetrasiloxane, used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, stabilized against polymerization, comprising 1,3,5,7-tetramethylcyclotetrasiloxane, 1-hexanoic acid and a free radical scavenger selected from the group consisting of 2,6-di-tert-butyl-4-methyl phenol, 2,2,6,6-tetramethyl-1-piperidinyloxy and mixtures thereof.
21. A composition of 1,3,5,7-tetramethylcyclotetrasiloxane, used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, stabilized against polymerization, comprising 1,3,5,7-tetramethylcyclotetrasiloxane, glycerol and a free radical scavenger selected from the group consisting of 2,6-di-tert-butyl-4-methyl phenol, 2,2,6,6-tetramethyl-1-piperidinyloxy and mixtures thereof.
22. A composition of 1,3,5,7-tetramethylcyclotetrasiloxane, used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, stabilized against polymerization, comprising 1,3,5,7-tetramethylcyclotetrasiloxane, acetic anhydride and a free radical scavenger selected from the group consisting of 2,6-di-tert-butyl-4-methyl phenol, 2,2,6,6-tetramethyl-1-piperidinyloxy and mixtures thereof.
23. A composition of 1,3,5,7-tetramethylcyclotetrasiloxane comprising (a) 1,3,5,7-tetramethylcyclotetrasiloxane, (b) a polymerization inhibitor selected from 2,4-pentanedione; 1-hexanoic acid; glycerol; acetic anhydride; β-diketones RC(O)CH 2 C(O)R; aliphatic carboxylic acids RCOOH; aliphatic dicarboxylic acids HOOC—(CH 2 ) n —COOH in which 1≦n≦8; phenols C 6 R (6-n) (OH) n in which 1≦n≦5; polyols CH 2 X(CHX) n CH 2 X, in which X=H or OH but at least one X=OH and 1≦n≦8; anhydrides RCH 2 —C(O)—O—C(O)—CH 2 R; hydrodosiloxanes R 3 Si—(O—SiR 2 ) n —OSiR 3 , in which 0≦n≦8, all wherein R is individually selected from the group consisting of hydrogen, normal, branched or cyclic C 1-10 alkyl groups; and mixtures thereof, and (c) a tree radical scavenger selected from 2,6-di-tert-butyl-4-methyl phenol, 2,2,6,6-tetramethyl-1-piperidinyloxy, 2-tert-butyl-4-hydroxyanisole, 3tert-butyl-4-hydroxyanisole, propyl ester 3,4,5-trihydroxy-benzoic acid, 2-(1,1-dimethylethyl)-1,4-benzenediol, diphenylpicrylhydrazyl, 4-tert-butylcatechol, N-methylaniline, p-methoxydiphenylamine, diphenylamine, N,N′-diphenyl-p-phenylenediamine, p-hydroxydiphenylamine, phenol, octadecyl-3(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, tetrakis(methylene(3,5-di-tert-butyl)-4-hydroxyhydrocinnamate)methane, phenothiazines, alkylamidonoisoureas, thiodiethylene bis(3,5-di-tert-butyl-4-hydroxy-hydrocinnamate, 1,2,-bis(3,5-di-tert-butyl-4-hydroxyhydrocinnamoyl)hydrazine, tris(2-methyl-4-hydroxy-5-tert-butylphenyl)butane, cyclic neopentanetetrayl bis(octadecyl phosphite), 4,4′-thiobis(6-tert-butyl-m-cresol), 2,2′-methylenebis(6-tert-butyl-p-cresol), oxalyl bis(benzylidenehydrazide) and mixtures thereof.
24. A composition of a cyclotetrasiloxane, the composition comprising; (a) said cyclotetrasiloxane having the following formula:
where R 1-7 are individually selected from the group consisting of hydrogen, a normal, branched or cyclic C 1-10 alkyl group, and a C 1-4 alkoxy group, (b) a neutral to weakly acidic polymerization inhibitor; and (c) a free radical scavenger.
25. A composition that is used in a chemical vapor deposition process and is stabilized for extended periods of heating, the composition comprising:
(a) a cyclotetrasiloxane having the following formula:
where R 1-7 are individually selected from the group consisting of hydrogen, a normal, branched or cyclic C 1-10 alkyl group, and a C 1-4 alkoxy group; and
(b) a free radical scavenger.
26. The composition of claim 25 wherein the free radical scavenger is at least one selected from 2,6-di-tert-butyl-4-methyl phenol, 2,2,6,6-tetramethyl-1-piperidinyloxy, 2-tert-butyl-4-hydroxyanisole, 3-tert-butyl-4-hydroxyanisole, propyl ester 3,4,5-trihydroxy-benzoic acid, 2-(1,1-dimethylethyl)-1,4-benzenediol, diphenylpicrylhydrazyl, 4-tert-butylcatechol, N-methylaniline, p-methoxydiphenylamine, diphenylamine, N,N′-diphenyl-p-phenylenediamine, p-hydroxydiphenylamine, phenol, octadecyl-3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, tetrakis(methylene(3,5-di-tert-butyl)-4-hydroxy-hydrocinnamate)methane, phenothiazines, alkylamidonoisoureas, thiodiethylene bis(3,5,-di-tert-butyl-4-hydroxy-hydrocinnamate 1,2,-bis(3,5-di-tert-butyl-4-hydroxyhydrocinnamoyl)hydrazine, tris(2-methyl-4-hydroxy-5-tert-butylphenyl)butane, cyclic neopentanetetrayl bis(octadecyl phosphite), 4,4′-thiobis(6-tert-butyl-m-cresol), 2,2′-methylenebis(6-tert-butyl-p-cresol), oxalyl bis(benzylidenehydrazide), raw seed oils, wheat germ oils, tocopherols, and gums.
27. A composition of 1,3,5,7-tetramethylcyclotetrasiloxane, used in a chemical deposition process and stabilized for extended periods of heating, comprising 1,3,5,7-tetramethylcyclotetrasiloxane and at least one free radical scavenger selected from the group consisting of 2,6-di-tert-butyl-4-methyl phenol, 2,2,6,6-tetramethyl-1-piperidinyloxy, and mixtures thereof.
28. A process for stabilizing a cyclotetrasiloxane for extended periods of heating wherein the cyclotetrasiloxane is used as a precursor in a chemical vapor deposition process and has the following formula:
where R 1-7 are individually selected from the group consisting of hydrogen, a normal, branched or cyclic C 1-10 alkyl group, and a C 1-4 alkoxy group, the process comprising: adding a free radical scavenger to the cyclotetrasiloxane.