Aqueous stripping and cleaning composition
View Patent ↗The present invention relates to aqueous compositions used to remove post etch organic and inorganic residue as well polymeric residues and contaminants from semiconductor substrates. The compositions are comprised of a water soluble organic solvent, a sulfonic acid and water.
1. A composition for removing etch and/or ash residue or contaminants from a semiconductor substrate comprising:
(A) from 45 to 90 wt % of a water soluble organic solvent,
(B) from 3 to 10 wt % of a sulfonic acid or its corresponding salt, and
(C) from 5 to 50 wt % water wherein all the ingredients contain therein are dissolved.
2. The composition as claimed in claim 1 , further comprising a corrosion inhibitor.
3. The composition as claimed in claim 1 , wherein the water soluble organic solvent is monoethanolamine, N-methylethanolamine, dimethylsulfoxide, dimethylacetamide or mixtures thereof.
4. The composition as claimed in claim 1 , wherein the sulfonic acid or its corresponding salt is wherein the sulfonic acid by the words p-toluene sulfonic acid, 1,5-naphthalene disulfonic acid, 4-ethylbenzene sulfonic acid, dodecylbenzene sulfonic acid or mixtures thereof.
5. The composition as claimed in claim 2 , wherein the corrosion inhibitor is gallic acid, catechol, benzotriazole, benzoic acid, malonic acid, ammonium malonate or mixtures thereof.
6. A composition for removing etch and/or ash residue or contaminants from a semiconductor substrate comprising:
(A) from 45 to 90 wt % of a water soluble organic solvent,
(B) from 3 to 10 wt % of a sulfonic acid or its corresponding salt,
(C) from 5 to 50 wt % water, and
(D) optionally from 0.1 to 15 wt % of a corrosion inhibitor wherein all the ingredients contain therein are dissolved.
7. A composition for removing etch and/or ash residue or contaminants from a semiconductor substrate comprising:
(A) from 45 to 90 wt % of a water soluble organic solvent,
(B) from 1 to 20 wt % of a sulfonic acid or its corresponding salt,
(C) from 5 to 50 wt % water, and
(D) from 0.1 to 20 wt % of a corrosion inhibitor wherein all the ingredients contain therein are dissolved.
8. The composition of claim 6 wherein component (B) comprises an alkytbenzene sulfonate having less than 9 carbon atoms.
9. The composition of claim 6 wherein amount of component (A) ranges from 50 to 90 wt %.
10. The composition of claim 9 wherein amount of component (A) ranges from 60 to 90 wt %.
11. The composition of claim 7 wherein component (B) comprises a alkylbenzene sulfonate having less than 9 carbon atoms.
12. The composition of claim 7 wherein amount of component (A) ranges from 50 to 90 wt %.
13. The composition of claim 12 wherein amount of component (A) ranges from 60 to 90 wt %.