IP Library Granted Patent US 7,033,554
Granted Patent B2
US 7,033,554 · App. 10/123,441 · Granted Apr 25, 2006

Apparatus for producing water for use in manufacturing semiconductors

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Quick Facts
Patent No.
US 7,033,554
App. No.
10/123,441
Granted
Apr 25, 2006
Kind
B2
Abstract

Disclosed is a process of treating semiconductor substrates, including the production of pure water, a method of producing the pure water for semiconductor fabrication, and a water-producing apparatus. Ammonia is catalytically oxidized in a catalytic conversion reactor to form pure water. The water is then supplied to a semiconductor fabrication process. The water-producing apparatus comprises a housing surrounding a catalytic material for adsorbing ammonia, an ammonia and oxidant source, each in communication with the housing, and an outlet for reaction products. The outlet is connected to a semiconductor processing apparatus. According to preferred embodiments of the invention, the apparatus can be a catalytic tube reactor, a fixed bed reactor or a fluidized bed reactor. This process and apparatus allows the quantity of unreacted excess oxidant to be limited, preventing undesired oxidation of low oxidation resistant metal gate electrodes during semiconductor fabrication processes, such as during wet oxidation processes like source/drain reoxidation. At the same time, the use of ammonia reactants lessens the risk of dangerous explosions and excessive boron diffusion while fabricating surface p-channel semiconductor devices.

Claims (30)

1. An apparatus for producing pure water, comprising:

a housing surrounding a catalytic material for adsorbing ammonia;

a source of ammonia in communication with said housing;

a source of oxidant in communication with said housing; and

an outlet for reaction products of catalytic reactions of ammonia from the source of ammonia with oxidant from the source of oxidant, said outlet connected to an inlet of a semiconductor processing apparatus.

2. The apparatus of claim 1 , wherein said outlet is in communication with an oxidation chamber.

3. The apparatus of claim 1 , further comprising a mixing chamber in communication with each of said ammonia source and said oxidant source, said mixing chamber upstream of said housing.

4. The apparatus of claim 1 , further comprising a heat source to heat the ammonia and oxidant.

5. The apparatus of claim 4 , wherein said heat source heats said catalytic material.

6. The apparatus of claim 1 , wherein said oxidant comprises oxygen gas.

7. The apparatus of claim 1 , wherein said source of ammonia comprises a mass flow controller and a valve.

8. The apparatus of claim 1 , wherein said source of oxidant comprises a mass flow controller and a valve.

9. The apparatus of claim 1 , wherein the source of ammonia and the source of oxidant are in communication with said housing via a common inlet line.

10. The apparatus of claim 1 , wherein the source of ammonia provides ammonia in gaseous form.

11. The apparatus of claim 1 , wherein the source of oxidant provides oxidant in gaseous form.

12. The apparatus of claim 1 , wherein the apparatus comprises a catalytic tube reactor which comprises the housing.

13. The apparatus of claim 1 , wherein the apparatus comprises a packed bed reactor which comprises the housing.

14. The apparatus of claim 1 , wherein the apparatus comprises a fluidized bed reactor which comprises the housing.

15. The apparatus of claim 1 , wherein the housing comprises a heat-resistant, corrosion-resistant alloy.

16. The apparatus of claim 1 , wherein the semiconductor processing apparatus comprises an oxidation furnace.

17. An apparatus for producing water, the apparatus comprising:

a reactor comprising a catalyst;

an ammonia source in fluid communication with the catalyst;

an oxidant source in fluid communication with the catalyst; and

a conduit fluidly connecting the reactor to a semiconductor processing apparatus, the conduit providing a pathway for reaction products of catalytic reactions of ammonia from the ammonia source and oxidant from the oxidant source.

18. An apparatus comprising:

a housing surrounding a catalytic material for adsorbing ammonia;

an ammonia source in communication with said housing;

an oxidant source in communication with said housing; and

a semiconductor processing apparatus in fluid communication with said housing to receive reaction products of catalytic reactions of ammonia from the ammonia source with oxidant from the oxidant source.

Assignments (6)
RELEASE OF U.S. PATENT AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Oct 12, 2018
From: ROYAL BANK OF CANADA, AS LENDER
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 047645/0424 →
U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Sep 9, 2014
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CPPIB CREDIT INVESTMENTS INC., AS LENDER; ROYAL BANK OF CANADA, AS LENDER
Reel/Frame 033706/0367 →
CHANGE OF ADDRESS Recorded Sep 3, 2014
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 033678/0096 →
RELEASE OF SECURITY INTEREST Recorded Aug 7, 2014
From: ROYAL BANK OF CANADA
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.; CONVERSANT IP N.B. 868 INC.; CONVERSANT IP N.B. 276 INC.
Reel/Frame 033484/0344 →
CHANGE OF NAME Recorded Mar 13, 2014
From: MOSAID TECHNOLOGIES INCORPORATED
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 032439/0638 →
U.S. INTELLECTUAL PROPERTY SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) - SHORT FORM Recorded Jan 10, 2012
From: 658276 N.B. LTD.; 658868 N.B. INC.; MOSAID TECHNOLOGIES INCORPORATED
To: ROYAL BANK OF CANADA
Reel/Frame 027512/0196 →