IP Library Granted Patent US 7,180,929
Granted Patent B2
US 7,180,929 · App. 10/126,348 · Granted Feb 20, 2007

Wafer-level test structure for edge-emitting semiconductor lasers

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Quick Facts
Patent No.
US 7,180,929
App. No.
10/126,348
Granted
Feb 20, 2007
Kind
B2
Abstract

Wafer-level stage testing of semiconductor lasers can be facilitated by directing a light beam emitted from the semiconductor laser toward a direction different from a path of the light beam as originally emitted from the laser. A test structure can be coupled to a back facet of the laser and can include a first region separated from a second region by an inclined interface. When a light beam is emitted from the laser, the light beam can be received on the inclined interface and then directed toward a light detector for detection and evaluation.

Claims (7)

1. An article of manufacture, comprising:

at least one light emitting device located on a semiconductor wafer, wherein the light emitting device emits light substantially parallel to the plane of the wafer through one or both of a first end and a second end; and

a test structure formed in the wafer and removable therefrom, the test structure being optically coupled to one of the first end or the second end of the light emitting device and comprising an inclined interface formed in the wafer between a first non-gaseous material and a second non-gaseous material, wherein the interface is capable of directing light received from the first end or the second end of the light emitting device towards a direction different from an original path of the light emitted from the first end or the second end of the light emitting device.

2. The article of manufacture of claim 1 wherein the first end of each light emitting device comprises a front facet and the second end of each light emitting device comprises a back facet.

3. The article of manufacture of claim 2 wherein a plurality of light emitting devices are arranged in rows, the back facet of each light emitting device in a row opposing the back facet of a corresponding light emitting device located in an adjacent row.

4. The article of manufacture of claim 1 wherein the inclined interface is capable to reflect light received from the light emitting device in a direction substantially orthogonal to the original path.

5. The article of manufacture of claim 1 , further comprising a light detector formed adjacent to the test structure and capable to detect divergent light directed from the inclined interface.

Assignments (8)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 4, 2013
From: INTEL CORPORATION
To: MICRON TECHNOLOGY, INC.
Reel/Frame 030747/0001 →