Atomic layer deposition and conversion
A method for growing films for use in integrated circuits using atomic layer deposition and a subsequent converting step is described. In an embodiment, the subsequent converting step includes oxidizing a metal atomic layer to form a metal oxide layer. The atomic layer deposition and oxidation step are then repeated to produce a metal oxide layer having sufficient thickness for use as a metal oxide layer in an integrated circuit. The subsequent converting step, in an embodiment, includes converting the atomic deposition layer by exposing it to one of nitrogen to form a nitride layer, carbon to form a carbide layer, boron to form a boride layer, and fluorine to form a fluoride layer. Systems and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method are also described.
1. An atomic layer deposition method of forming a TaNTaSi thin film electrode on a layer including silicon, comprising:
atomic layer depositing a thin metal film including tantalum on the layer including silicon;
enclosing the layer including silicon with an activated nitrogen hydride gas including ammonia;
forming a thin metal nitride film including TaNTaSi by reacting the thin metal film including tantalum with the activated nitrogen hydride including ammonia; and
forming a metal-containing TiO x SiO x electrode in contact with the thin metal nitride film including TaNTaSi in a region associated with a trench including a region of SrBaTiO 3 .
2. The atomic layer deposition method of claim 1 , wherein forming a metal-containing TiO x SiO x electrode includes providing a first, metal-containing gas, providing a second, activated hydrogen gas, reacting the first gas with the second gas to deposit a metal layer, and oxidizing the metal layer.
3. The method of claim 2 , wherein oxidizing includes oxidizing with an activated gas comprising N 2 O.
4. The method of claim 2 , wherein oxidizing includes oxidizing to form a metal oxide layer matched to a metal-containing electrode, Si in a region associated with a trench including a region of SrBaTiO 3 .