Facilitating optical proximity effect correction through pupil filtering

1. A method for using pupil filtering to mitigate optical proximity effects that arise during an optical lithography process for manufacturing an integrated circuit, comprising:

applying a photoresist layer to a wafer; and

exposing the photoresist layer through a mask;

wherein exposing the photoresist layer involves performing pupil filtering, wherein a pupil filtering occurs in a single exposure using a single pupil filter that is symmetric with respect to the pupil center;

wherein the pupil filtering corrects for optical proximity effects caused by an optical system used to expose the photoresist layer.

2. The method of claim 1 , wherein the pupil filtering introduces phase variations into the pupil of the optical system that is used to expose the photoresist layer.

3. The method of claim 1 ,

wherein the pupil filtering introduces attenuation into a pupil of an optical system that is used to expose the photoresist layer; and

wherein the attenuation varies radially from the center of the pupil to provide proximity effect correction for a printed image on the wafer.

4. The method of claim 3 , wherein the attenuation increases with radial distance from the center of the pupil.

5. The method of claim 4 , wherein the attenuation increases with radial distance to achieve a Gaussian intensity apodization.

6. The method of claim 1 , wherein the pupil filtering is accomplished by providing filtering in a concentric ring surrounding the center of the pupil to cancel out ringing effects caused by edges of the pupil.

7. The method of claim 1 , wherein the pupil filtering additionally compensates for resist effects.

8. The method of claim 1 , wherein the exposure is part of an alternating aperture phase shift mask (PSM) process.

9. An apparatus that uses pupil filtering to mitigate optical proximity effects that arise during an optical lithography process for manufacturing an integrated circuit, comprising:

an exposure mechanism that is configured to expose a photoresist layer on a wafer through a mask using a single exposure;

an optical system within the exposure mechanism; and

a single pupil filter within the optical system that is symmetric with respect to the pupil center;

wherein the pupil filtering corrects for optical proximity effects caused by the optical system used to expose the photoresist layer.

10. The apparatus of claim 9 , wherein the pupil filtering introduces phase variations into the pupil of the optical system that is used to expose the photoresist layer.

11. The apparatus of claim 9 ,

wherein the pupil filter introduces attenuation into a pupil of an optical system; and

wherein the attenuation varies radially from the center of the pupil to provide proximity effect correction for a printed image on the wafer.

12. The apparatus of claim 11 , wherein the attenuation increases with radial distance from the center of the pupil.

13. The apparatus of claim 12 , wherein the attenuation increases with radial distance to achieve a Gaussian intensity apodization.

14. The apparatus of claim 9 , wherein the pupil filter is configured to provide filtering in a concentric ring surrounding the center of the pupil to cancel out ringing effects caused by edges of the pupil.

15. The apparatus of claim 9 , wherein the pupil filter additionally compensates for resist effects.

16. The apparatus of claim 9 , wherein the apparatus is part of a system that performs an alternating aperture phase shift mask (PSM) process.

17. An optical system that uses pupil filtering to mitigate optical proximity effects that arise during an optical lithography process for manufacturing an integrated circuit, comprising:

the optical system that is used to expose a photoresist layer on a wafer through a mask using a single exposure; and

a single pupil filter within the optical system that is symmetric with respect to the pupil center;

wherein the pupil filtering corrects for optical proximity effects caused by the optical system used to expose the photoresist layer.

18. The optical system of claim 17 , wherein the pupil filtering introduces phase variations into the pupil of the optical system that is used to expose the photoresist layer.

19. The optical system of claim 17 ,

wherein the pupil filter introduces attenuation into a pupil of an optical system;

wherein the attenuation varies radially from the center of the pupil to provide proximity effect correction for a printed image on the wafer.

20. The optical system of claim 19 , wherein the attenuation increases with radial distance from the center of the pupil.

21. The optical system of claim 20 , wherein the attenuation increases with radial distance to achieve a Gaussian intensity apodization.

22. The optical system of claim 17 , wherein the pupil filter is configured to provide filtering in a concentric ring surrounding the center of the pupil to cancel out ringing effects caused by edges of the pupil.

23. The optical system of claim 17 , wherein the pupil filter additionally compensates for resist effects.

24. The optical system of claim 17 , wherein the optical system is part of a system that performs an alternating aperture phase shift mask (PSM) process.

25. A means for using pupil filtering to mitigate optical proximity effects that arise during an optical lithography process for manufacturing an integrated circuit, comprising:

an exposure means for exposing a photoresist layer on a wafer through a mask using a single exposure; and

a single pupil filtering means within the exposure means that is symmetric with respect to the center of the pupil filtering means;

wherein the pupil filtering corrects for optical proximity effects caused by an optical system used to expose the photoresist layer.

26. A method for manufacturing an integrated circuit that uses pupil filtering to mitigate optical proximity effects that arise during optical lithography, the method comprising:

applying a photoresist layer to a wafer;

exposing the photoresist layer through a mask;

wherein exposing the photoresist layer involves performing pupil filtering, wherein the pupil filtering occurs in a single exposure using a single pupil filter that is symmetric with respect to the pupil center;

wherein the pupil filtering corrects for optical proximity effects caused by an optical system used to expose the photoresist layer; and

developing the photoresist layer.

27. The method of claim 26 , wherein the pupil filtering introduces phase variations into the pupil of the optical system that is used to expose the photoresist layer.

28. The method of claim 26 ,

wherein the pupil filtering introduces attenuation into a pupil of an optical system that is used to expose the photoresist layer; and

wherein the attenuation varies radially from the center of the pupil to provide proximity effect correction for a printed image on the wafer.

29. A pupil filter that mitigates optical proximity effects that arise during an optical lithography process for manufacturing an integrated circuit, comprising:

a single pupil filter that is symmetric with respect to the pupil center for use within a pupil of an optical system used to expose the photoresist layer in a single exposure during the optical lithography process;

wherein the pupil filtering corrects for optical proximity effects caused by the optical system.

30. The pupil filter of claim 29 , wherein the pupil filtering introduces phase variations into the pupil of the optical system that is used to expose the photoresist layer.

31. The pupil filter of claim 29 ,

wherein the pupil filter introduces attenuation into a pupil of an optical system; and

wherein the attenuation varies radially from the center of the pupil to provide proximity effect correction for a printed image on the wafer.