IP Library Granted Patent US 6,839,882
Granted Patent B2
US 6,839,882 · App. 10/162,536 · Granted Jan 4, 2005

Method and apparatus for design of integrated circuits

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Quick Facts
Patent No.
US 6,839,882
App. No.
10/162,536
Granted
Jan 4, 2005
Kind
B2
Abstract

Methods are apparatuses are disclosed for an electrical apparatus. The electrical apparatus includes one or more integrated circuits designed at least partly with library cells. Various embodiments cover one or more of virtual buses; virtual tap cells; placement primarily for electrical coupling to a well or substrate; placement at a granularity level of electrical coupling to a well or substrate; metal substantially octagonal via structures; free placement according to a minimum drawing resolution of significant features, cell boundary vertices, and routing wires; and cells permitting overlap.

Claims (34)

1. An electrical apparatus, comprising:

one or more integrated circuits designed at least partly with one or more virtual tap cells, comprising:

one or more electrical couplings to at least one of: one or more wells and one or more substrates,

wherein at least one electrical coupling of the one or more electrical couplings is positioned entirely outside one or more hierarchies of the one or more virtual tap cells.

2. The apparatus of claim 1 , wherein the at least one of the one or more taps is placed physically entirely in one of the one or more virtual tap cells.

3. The apparatus of claim 1 , wherein the at least one of the one or more taps is placed physically partly in one of the one or more virtual tap cells.

4. The apparatus of claim 1 , wherein the at least one of the one or more taps is placed physically partly in one of the one or more other cells.

5. The apparatus of claim 1 , wherein the at least one electrical coupling is positioned physically on top of the one or more virtual tap cells.

6. The apparatus of claim 1 , wherein the at least one electrical coupling is positioned physically between at least two of the one or more virtual tap cells.

7. The apparatus of claim 1 , wherein at least one integrated circuit of the one or more integrated circuits is formed by a CMOS process.

8. The apparatus of claim 1 , wherein at least one integrated circuit of the one or more integrated circuits is formed by a Bi-CMOS process.

9. The apparatus of claim 1 , wherein at least one integrated circuit of the one or more integrated circuits is formed by a Bipolar process.

10. The apparatus of claim 1 , wherein at least one integrated circuit of the one or more integrated circuits is formed by a Gallium-Arsenide process.

11. The apparatus of claim 1 , wherein at least one integrated circuit of the one or more integrated circuits is formed by a Silicon-on-Insulator process.

12. The apparatus of claim 1 , wherein the one or more cells includes at least one standard cell.

13. The apparatus of claim 1 , wherein the one or more cells includes at least one gate array cell.

14. The apparatus of claim 1 , wherein the one or more cells includes at least one analog cell.

15. The apparatus of claim 1 , wherein the one or more cells includes at least one analog mixed signal cell.

16. The apparatus of claim 1 , wherein the one or more cells includes at least one analog and digital cell.

17. The apparatus of claim 1 , wherein the one or more cells includes at least one functional block cell.

18. An electrical apparatus, comprising:

one or more integrated circuits designed at least partly with one or more cells, the one or more cells having one or more ports clipped at an angle.

19. The apparatus of claim 18 , wherein at least one integrated circuit of the one or more integrated circuits is formed by a CMOS process.

20. The apparatus of claim 18 , wherein at least one integrated circuit of the one or more integrated circuits is formed by a Bi-CMOS process.

21. The apparatus of claim 18 , wherein the integrated circuit of the integrated circuit design is formed by a Bipolar process.

22. The apparatus of claim 18 , wherein the integrated circuit of the integrated circuit design is formed by a Gallium-Arsenide process.

23. The apparatus of claim 18 , wherein the integrated circuit of the integrated circuit design is formed by a Silicon-on-Insulator process.

24. The apparatus of claim 18 , wherein the one or more cells includes at least one standard cell.

25. The apparatus of claim 18 , wherein the one or more cells includes at least one gate array cell.

26. The apparatus of claim 18 , wherein the one or more cells includes at least one analog cell.

27. The apparatus of claim 18 , wherein the one or more cells includes at least one analog mixed signal cell.

28. The apparatus of claim 18 , wherein the one or more cells includes at least one analog and digital cell.

29. The apparatus of claim 18 , wherein the one or more cells includes at least one functional block cell.

30. The apparatus of claim 18 , wherein the angle is about 45 degrees.

Assignments (13)
RELEASE OF U.S. PATENT AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Oct 12, 2018
From: ROYAL BANK OF CANADA, AS LENDER
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 047645/0424 →
U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Sep 9, 2014
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CPPIB CREDIT INVESTMENTS INC., AS LENDER; ROYAL BANK OF CANADA, AS LENDER
Reel/Frame 033706/0367 →
CHANGE OF ADDRESS Recorded Sep 3, 2014
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 033678/0096 →
RELEASE OF SECURITY INTEREST Recorded Aug 7, 2014
From: ROYAL BANK OF CANADA
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.; CONVERSANT IP N.B. 868 INC.; CONVERSANT IP N.B. 276 INC.
Reel/Frame 033484/0344 →
CHANGE OF NAME Recorded Mar 13, 2014
From: MOSAID TECHNOLOGIES INCORPORATED
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 032439/0638 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 3, 2014
From: MOSAID TECHNOLOGIES CORPORATION
To: MOSAID TECHNOLOGIES INCORPORATED
Reel/Frame 032332/0528 →
MERGER Recorded Mar 3, 2014
From: VIRTUAL SILICON TECHNOLOGY, INC.
To: MOSAID DELAWARE, INC.
Reel/Frame 032378/0261 →
CERTIFICATE OF AMENDMENT OF CERTIFICATE OF INCORPORATION Recorded Mar 3, 2014
From: MOSAID DELAWARE, INC.
To: MOSAID TECHNOLOGIES CORPORATION
Reel/Frame 032378/0309 →
CHANGE OF REGISTERED OFFICE ADDRESS Recorded Mar 3, 2014
From: MOSAID TECHNOLOGIES INCORPORATED
To: MOSAID TECHNOLOGIES INCORPORATED
Reel/Frame 032378/0432 →
U.S. INTELLECTUAL PROPERTY SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) - SHORT FORM Recorded Jan 10, 2012
From: 658276 N.B. LTD.; 658868 N.B. INC.; MOSAID TECHNOLOGIES INCORPORATED
To: ROYAL BANK OF CANADA
Reel/Frame 027512/0196 →
RELEASE OF SECURITY INTEREST Recorded Nov 4, 2005
From: SILICON VALLEY BANK
To: VIRTUAL SILICON TECHNOLOGY, INC.
Reel/Frame 017176/0916 →
CORRECT ASSIGNMENT TO CORRECT ASSIGNEE NAME, PREVIOUSLY RECORDED ON REEL 014885 FRAME 0629. Recorded Jun 1, 2005
From: VIRTUAL SILICON TECHNOLOGY, INC
To: SILICON VALLEY BANK
Reel/Frame 016198/0295 →
SECURITY AGREEMENT Recorded Jul 20, 2004
From: VIRTUAL SILICON TECHNOLOGY, INC.
To: SILICON VALLEY BANK DBA SILICON VALLEY EAST
Reel/Frame 014885/0629 →