Method of cleaning a surface of a water in connection with forming a barrier layer of a semiconductor device
A method of cleaning a surface of a silicon wafer includes subjecting the surface of the silicon wafer to a hydrogen (H 2 ) gas plasma containing at least one inert gas while biasing the hydrogen plasma with a RF bias power to direct the hydrogen (H 2 ) plasma to clean the surface of the silicon wafer.
1. A method of cleaning a surface of a silicon wafer doped with p-type impurities, comprising:
reducing a surface concentration the p-type impurities in the silicon wafer doped with the p-type impurities by subjecting the surface of the silicon wafer to a hydrogen (H 2 ) plasma containing at least one inert gas while biasing the hydrogen plasma with an RF bias power to direct the hydrogen (H 2 ) plasma onto the surface of the silicon wafer, wherein the surface of the silicon wafer is subjected to the hydrogen plasma at a temperature of greater than about 600° C. to evaporate the p-type impurities.
2. A method of cleaning a surface of a silicon wafer as claimed in claim 1 , wherein the RF bias power is about 50 W to about 900 W.
3. A method of cleaning a surface of a silicon wafer as claimed in claim 2 , wherein the RF bias power is a high frequency power at about 13 MHz to about 14 MHz.
4. A method of cleaning a surface of a silicon wafer as claimed in claim 1 , wherein the hydrogen plasma is generated using an RF plasma power.
5. A method of cleaning a surface of a silicon wafer as claimed in claim 4 , wherein the RF plasma power is about 200 W to about 900 W.
6. A method of cleaning a surface of a silicon wafer as claimed in claim 5 , wherein the RF plasma power is a low frequency power at about 400 KHz to about 500 KHz.
7. A method of cleaning a surface of a silicon wafer as claimed in claim 1 , wherein the at least one inert gas is an argon gas.
8. A method of cleaning a surface of a silicon wafer as claimed in claim 1 , wherein the hydrogen plasma is generated using the at least one inert gas and hydrogen.
9. A method of cleaning a surface of a silicon wafer as claimed in claim 8 , wherein a ratio of the at least one inert gas and hydrogen is about 1:9 to about 2:3.
10. A method of cleaning a surface of a silicon wafer as claimed in claim 1 , wherein the surface of the silicon wafer is subjected to the hydrogen plasma for a period of time of about 5 seconds to about 5 minutes.
11. A method of cleaning a surface of a silicon wafer as claimed in claim 1 , wherein the surface of the silicon wafer is subjected to the hydrogen plasma at a temperature between about 615° C. and about 650° C.
12. A method of cleaning a surface of a silicon wafer as claimed in claim 1 , wherein the p-type impurities are boron.