IP Library › Granted Patent US 6,699,760
Granted Patent Utility
US 6,699,760 · Confirmation No. 4900

METHOD FOR GROWING LAYERS OF GROUP III - NITRIDE SEMICONDUCTOR HAVING ELECTRICALLY PASSIVATED THREADING DEFECTS

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2003-12-01 IFEE Issue Fee Payment (PTO-85B) 1 View
2003-08-25 IDS Information Disclosure Statement (IDS) Form (SB08) 2 View
2002-06-25 TRNA Transmittal of New Application 1 View
2002-06-25 SPEC Specification 15 View
2002-06-25 CLM Claims 3 View
2002-06-25 ABST Abstract 1 View
2002-06-25 DRW Drawings-only black and white line drawings 11 View
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Quick Facts
Patent No.
US 6,699,760
App. No.
10/179,806
Filed
2002-06-25
Granted
2004-03-02
Pub. No.
US20030235970A1
Art Unit
2813
PTA
0 days