System and method for erase voltage control during multiple sector erase of a flash memory device
View Patent ↗A method for erasing a flash memory. In a flash memory device having multiple sectors a plurality of sectors is selected for erase ( 810 ). a subset of sectors is selected ( 815 ) and an erase pulse is applied simultaneously to all sectors in the subset ( 820 ). After the application of an erase pulse having an initial voltage value, at least one sector of the subset is verified ( 825 ). If there is at least one unerased cell in the verified sector, the erase voltage is adjusted ( 830 ) and another erase pulse is applied to the subset of sectors ( 820 ). The adjustment of the erase voltage may be a function of the number of times that an erase pulse has been applied to the subset. This cycle is repeated on the subset until the selected sector is verified as erased. After a sector is verified, the erase/verify cycle is applied to one or more of the remaining sectors in the subset until each of the remaining sectors has been verified as erased. After all of the sectors in the subset are erased, the erase voltage is reset to its initial value ( 840 ) and another subset of sectors is selected for erase/verify as described above ( 815 ). The process may be repeated until all of the memory sectors in the device have been erased ( 850 ). A flash memory device with embedded logic may be used to execute the method.
1. A method for controlling gate voltage during an erase of a flash memory device comprising a plurality of memory sectors, the method comprising:
a) selecting a portion of said plurality of memory sectors ( 810 );
b) selecting an unerased subset of said portion of said plurality of memory sectors ( 815 );
c) applying an erase pulse having a gate erase voltage to the subset of memory sectors ( 820 );
d) selecting a memory sector from the subset and erase verifying the selected sector ( 825 );
e) if the selected sector is not erased, applying a monotonically increasing function to said gate erase voltage ( 830 );
f) repeating c) through e) until said subset of memory sectors is erased;
g) repeating steps b) through f) until said portion of said plurality of memory sectors is erased;
h) resetting said gate erase voltage ( 840 ); and:
i) repeating steps a) through h) until said plurality of memory sectors is erased ( 850 ).
2. The method of claim 1 , wherein said gate erase voltage is negative.
3. The method of claim 1 , wherein said method is embedded in said flash memory device 602 .
4. The method of claim 1 , further comprising applying an Automatic Program Disturb after Erase (APDE) ( 735 ) pulse.
5. The method of claim 1 , wherein said gate erase voltage is obtained from a source external to said flash memory device 602 .
6. The method of claim 1 , further comprising applying a preprogram pulse ( 705 ).
7. The method of claim 1 , wherein said gate is grounded and said source is positively biased.
8. A method for controlling the gate voltage during the erase of a flash memory device comprising a plurality of memory sectors, the method comprising:
a) selecting a first, second, third and fourth of said plurality of memory sectors ( 910 );
b) erase verifying said first memory sector ( 915 );
c) if said first memory sector is not erased, applying a gate erase voltage to said first, second, third and fourth memory sectors for a period of time ( 920 );
d) applying a monotonically increasing function to said gate erase voltage ( 925 );
e) repeating b) through d) until said first memory sector is erased;
f) erase verifying said second memory sector ( 930 );
g) if said second memory sector is not erased, applying the gate erase voltage to said second and fourth memory sectors for a period of time ( 935 );
h) applying a monotonically increasing function to the gate erase voltage ( 940 );
i) repeating f) through h) until said second memory sector is erased;
j) erase verifying said third memory sector ( 945 );
k) if said third memory sector is not erased, applying the gate erase voltage to said third memory sector for a period of time ( 950 );
l) applying a monotonically increasing function to the gate erase voltage ( 955 );
m) repeating j) through l) until said third memory sector is erased;
n) erase verifying said fourth memory sector ( 960 );
o) if said fourth memory sector is not erased, applying the gate erase voltage to the fourth memory sector for a period of time ( 965 );
p) applying a monotonically increasing function to the gate erase voltage ( 970 );
q) repeating n) through p) until said fourth memory sector is erased; and,
r) repeating a) through )q) until said plurality of memory sectors is erased.
9. The method of claim 8 , wherein said gate erase voltage is negative.
10. The method of claim 8 , wherein said method is embedded in said flash memory device ( 600 ).
11. The method of claim 8 , further comprising applying an Automatic Program Disturb after Erase (APDE) ( 735 ) pulse.
12. The method of claim 8 , wherein said gate erase voltage is obtained from a source external to said flash memory device ( 600 ).
13. The method of claim 8 , further comprising applying a preprogram pulse ( 705 ).
14. The method of claim 8 , wherein said gate is grounded and said source is positively biased.
15. The method of claim 8 , wherein said monotonically increasing function comprises lowering said gate voltage by 0.13 volts after every fourth pulse.
16. The method of claim 8 comprising using an initial gate erase voltage of −5.2 volts.
17. The method of claim 8 wherein the gate voltage is limited to −9.2 volts.
18. A flash memory device comprising:
a plurality of memory sectors ( 610 , 615 );
embedded logic for selecting a subset of said plurality of memory sectors ( 605 );
logic for applying a monotonically increasing gate erase voltage in a series of pulses to memory sectors in the subset until the memory sectors in the subset are erased ( 605 ); and
logic for resetting the gate erase voltage ( 605 ).
19. The flash memory device of claim 18 , wherein said subset comprises four memory sectors.
20. The flash memory device of claim 18 , wherein the first pulse in said series is applied to all memory sectors in said subset.