Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate
The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or Schottky-like region with a substrate and its fabrication method. In one aspect, the gate insulating layer has a dielectric constant greater than the dielectric constant of silicon. In another aspect, the current regulating device may be a MOSFET device, optionally a planar P-type or N-type MOSFET, having any orientation. In another aspect, the source and/or drain may consist partially or fully of a silicide.
1. A device for regulating the flow of electrical current, the device comprising:
a semiconductor substrate;
a gate electrode;
an electrically insulating layer located between the gate electrode and the semiconductor substrate, the insulating layer having a dielectric constant greater than 4.0;
a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate; and
wherein the source and drain electrodes are formed from a member of the group consisting of: platinum suicide, palladium silicide and iridium suicide.
2. A device for regulating the flow of electrical current, the device comprising:
a semiconductor substrate;
a gate electrode;
an electrically insulating layer located between the gate electrode and the semiconductor substrate, the insulating layer having a dielectric constant greater than 4.0;
a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate; and
wherein the insulating layer is formed from an oxy-nitride stack.
3. The device of claim 1 , wherein the insulating layer is formed from a member of the group consisting of metal oxides.
4. The device of claim 1 , wherein the insulating layer is formed from an oxy-nitride stack.
5. The device of claim 4 , wherein the Schottky contact or Schottky-like region is formed at least in areas adjacent to a channel region formed between the source electrode and the drain electrode, and wherein the channel region is doped.
6. A device for regulating the flow of electrical current, the device comprising:
a semiconductor substrate;
a gate electrode;
an electrically insulating layer located between the gate electrode and the semiconductor substrate, the insulating layer having a dielectric constant greater than 7.6;
a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate; and
wherein the source and drain electrodes are formed from a member of the group consisting of: platinum suicide, palladium suicide and iridium suicide.
7. A device for regulating the flow of electrical current, the device comprising:
a semiconductor substrate;
a gate electrode;
an electrically insulating layer located between the gate electrode and the semiconductor substrate, the insulating layer having a dielectric constant greater than 7.6;
a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate; and
wherein the insulating layer is formed from an oxy-nitride stack.
8. A device for regulating the flow of electrical current, the device comprising:
a semiconductor substrate;
a gate electrode;
an electrically insulating layer located between the gate electrode and the semiconductor substrate, the insulating layer having a dielectric constant greater than 15;
a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate; and
wherein the source and drain electrodes are formed from a member of the group consisting of platinum suicide, palladium suicide and iridium suicide.
9. A device for regulating the flow of electrical current, the device comprising:
a semiconductor substrate;
a gate electrode;
an electrically insulating layer located between the gate electrode and the semiconductor substrate, the insulating layer having a dielectric constant greater than 15;
a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate; and
wherein the insulating layer is formed from an oxy-nitride stack.