Patent Assignment
Reel/Frame 023263/0581
Assignment of Assignor's Interest
Recorded: 2009-09-23
Pages: 7
Assignor
SPINNAKER SEMICONDUCTOR, INC
Executed: 2009-09-14
Assignee
AVOLARE 2 LLC
112 ELLSWORTH PLACE, CHAPEL HILL, NORTH CAROLINA, 27516
Covered Properties
(21)
Method of Manufacturing a Short-Channel Fet with Schottky-Barrier Source and Drain Contacts
Patent:
6,303,479 →
Application:
09/465,357 →
Short-Channel Schottky-Barrier Mosfet Device
Transistor Having High Dielectric Constant Gate Insulating Layer and Source and Drain Forming Schottky Contact with Substrate
Short-Channel Schottky-Barrier Mosfet Device and Manufacturing Method
Field Effect Transistor Having Source and/or Drain Forming Schottky or Schottky-Like Contact with Strained Semiconductor Substrate
Short-Channel Schottky-Barrier Mosfet Device and Manufacturing Method
Schottky Barrier Cmos Fabrication Method
Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
Application:
10/796,514 →
Publication:
US 2004/0171240
Field Effect Transistor Having Source and/or Drain Forming Schottky or Schottky-Like Contact with Strained Semiconductor Substrate
Schottky barrier integrated circuit
Application:
10/944,627 →
Publication:
US 2005/0104152
Schottky-Barrier Mosfet Manufacturing Method Using Isotropic Etch Process
Transistor Having High Dielectric Constant Gate Insulating Layer and Source and Drain Forming Schottky Contact with Substrate
Short-channel Schottky-barrier MOSFET device and manufacturing method
Application:
10/970,210 →
Publication:
US 2005/0051815
Schottky barrier CMOS device and method
Application:
11/215,499 →
Publication:
US 2005/0287730
Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
Application:
11/455,905 →
Publication:
US 2007/0007605
Short-Channel Schottky-Barrier Mosfet Device and Manufacturing Method
Metal source/drain Schottky barrier silicon-on-nothing MOSFET device
Application:
11/513,894 →
Publication:
US 2007/0194353
Dynamic Schottky barrier MOSFET device and method of manufacture
Application:
11/543,631 →
Publication:
US 2007/0026590
Cmos Device with Zero Soft Error Rate
Metal Source Power Transistor And Method Of Manufacture
Application:
11/622,791 →
Publication:
US 2007/0187756
Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate
Application:
11/983,859 →
Publication:
US 2008/0079107
Related Assignments
(12)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
May 7, 2001
From: SNYDER, JOHN P.
To: SPINNAKER SEMICONDUCTOR, INC.
Reel/Frame 011774/0094 →
Assignment of Assignor's Interest
May 14, 2001
From: SNYDER, JOHN P.
To: SPINNAKER SEMICONDUCTOR, INC.
Reel/Frame 011795/0224 →
Assignment of Assignor's Interest
Oct 1, 2002
From: SNYDER, JOHN P.; LARSON, JOHN M.
To: SPINNAKER SEMICONDUCTOR, INC.
Reel/Frame 013341/0084 →
Assignment of Assignor's Interest
Feb 14, 2003
From: SNYDER, JOHN P.; LARSON, JOHN M.
To: SPINNAKER SEMICONDUCTOR, INC.
Reel/Frame 013776/0454 →
Assignment of Assignor's Interest
Feb 21, 2003
From: SNYDER, JOHN P.
To: SPINNAKER SEMICONDUCTOR, INC.
Reel/Frame 013776/0419 →
Assignment of Assignor's Interest
Sep 5, 2003
From: SNYDER, JOHN P.; LARSON, JOHN M.
To: SPINNAKER SEMICONDUCTOR, INC.
Reel/Frame 014451/0876 →
Assignment of Assignor's Interest
May 3, 2004
From: SNYDER, JOHN P.; LARSON, JOHM. M.
To: SPINNAKER SEMICONDUCTOR, INC.
Reel/Frame 015285/0398 →
Assignment of Assignor's Interest
Jan 21, 2005
From: SNYDER, JOHN P.; LARSON, JOHN M.
To: SPINNAKER SEMICONDUCTOR, INC.
Reel/Frame 016160/0641 →
Confirmatory License
Nov 21, 2005
From: SPINNAKER SEMICONDUCTOR, INC.
To: USA AS REPRESENTED BY THE SECRETARY OF THE ARMY
Reel/Frame 017249/0543 →
Assignment of Assignor's Interest
Apr 10, 2007
From: SNYDER, JOHN P.; LARSON, JOHN M.
To: SPINNAKER SEMICONDUCTOR, INC.
Reel/Frame 019142/0860 →
Assignment of Assignor's Interest
Apr 12, 2007
From: SNYDER, JOHN P.
To: SPINNAKER SEMICONDUCTOR, INC.
Reel/Frame 019153/0929 →
Assignment of Assignor's Interest
Jun 1, 2007
From: SNYDER, JOHN P.
To: SPINNAKER SEMICONDUCTOR, INC.
Reel/Frame 019367/0833 →