Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or Schottky-like region with a substrate and its fabrication method. In one aspect, the gate insulating layer has a dielectric constant greater than the dielectric constant of silicon. In another aspect, the current regulating device may be a MOSFET device, optionally a planar P-type or N-type MOSFET, having any orientation. In another aspect, the source and/or drain may consist partially or fully of a silicide.
1 - 96 . (canceled)
97 . A device for regulating the flow of electrical current, the device comprising:
a semiconductor substrate;
a gate electrode;
an electrically insulating layer located between the gate electrode and the semiconductor substrate, the insulating layer having a dielectric constant greater than 4 . 0 ; and
a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate.
98 . The device of claim 97 , wherein the source and drain electrodes are formed from a member of the group consisting of the rare earth silicides.
99 . The device of claim 97 , wherein the insulating layer is formed from a member of the group consisting of the metal oxides.
100 . The device of claim 97 , wherein the Schottky contact or Schottky-like region is at least in areas adjacent to a channel region formed between the source electrode and the drain electrode.
101 . The device of claim 97 , wherein an entire interface between at least one of the source and the drain electrodes and the semiconductor substrate forms a Schottky contact or Schottky-like region with the semiconductor substrate.
102 . The device of claim 100 , wherein the channel region is doped.
103 . The device of claim 97 , wherein the insulating layer includes more than one layer.
104 . The device of claim 98 , wherein the insulating layer is formed from a member of the group consisting of metal oxides.
105 . The device of claim 98 , wherein the insulating layer is formed from an oxy-nitride stack.
106 . The device of claim 104 , wherein the Schottky contact or Schottky-like region is formed at least in areas adjacent to a channel region formed between the source electrode and the drain electrode, and wherein the channel region is doped.
107 . The device of claim 105 , wherein the Schottky contact or Schottky-like region is formed at least in areas adjacent to a channel region formed between the source electrode and the drain electrode, and wherein the channel region is doped.
108 . A device for regulating the flow of electrical current, the device comprising:
a semiconductor substrate;
a gate electrode;
an electrically insulating layer located between the gate electrode and the semiconductor substrate, the insulating layer having a dielectric constant greater than 7.6 ; and
a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate.
109 . The device of claim 108 , wherein the source and drain electrodes are formed from a member of the group consisting of the rare earth silicides.
110 . The device of claim 108 , wherein the insulating layer is formed from a member of the group consisting of the metal oxides.
111 . The device of claim 108 , wherein the Schottky contact or Schottky-like region is at least in areas adjacent to a channel region formed between the source electrode and the drain electrode.
112 . The device of claim 108 , wherein an entire interface between at least one of the source and the drain electrodes and the semiconductor substrate forms a Schottky contact or Schottky-like region with the semiconductor substrate.
113 . The device of claim 111 , wherein the channel region is doped.
114 . The device of claim 108 , wherein the insulating layer includes more than one layer.
115 . A device for regulating the flow of electrical current, the device comprising:
a semiconductor substrate;
a gate electrode;
an electrically insulating layer located between the gate electrode and the semiconductor substrate, the insulating layer having a dielectric constant greater than 15; and
a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate.
116 . The device of claim 115 , wherein the source and drain electrodes are formed from a member of the group consisting of the rare earth silicides.
117 . The device of claim 115 , wherein the insulating layer is formed from a member of the group consisting of the metal oxides.
118 . The device of claim 115 , wherein the Schottky contact or Schottky-like region is at least in areas adjacent to a channel region formed between the source electrode and the drain electrode.
119 . The device of claim 115 , wherein an entire interface between at least one of the source and the drain electrodes and the semiconductor substrate forms a Schottky contact or Schottky-like region with the semiconductor substrate.
120 . The device of claim 118 , wherein the channel region is doped.
121 . The device of claim 115 , wherein the insulating layer includes more than one layer.