IP Library Granted Patent US 6,849,364
Granted Patent B2
US 6,849,364 · App. 10/226,743 · Granted Feb 1, 2005

Mask for fabricating semiconductor components

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,849,364
App. No.
10/226,743
Granted
Feb 1, 2005
Kind
B2
Abstract

A mask for fabricating semiconductor components contains first transparent regions and second transparent regions. The second regions are laid out such that they do not act on the regions of the photoresist directly beneath them in the exposure of the photoresist through the mask. The transparent regions define a size and a shape of structures to be formed.

Claims (16)

1. A mask for fabricating semiconductor components, comprising:

first transparent regions for determining a position of structures to be generated on the semiconductor components; and

second transparent regions, in conjunction with said first transparent regions, defining a size and a shape of the structures.

2. The mask according to claim 1 , wherein for each of the structures to be generated, one of said first transparent regions is provided, and a number of said second transparent regions are disposed in an environment of each of said first transparent regions.

3. The mask according to claim 1 , wherein said second transparent regions have first distances from one another, the first distances having a maximum value below a resolution limit of photoresist.

4. The mask according to claim 3 , wherein said first distances are equal.

5. The mask according to claim 4 , wherein one of said second transparent regions being disposed nearest a respective one of said first transparent regions has a second distance from said respective one of said first transparent regions, said second distance is at least equal to said first distances, whereby a value of said second distance is less than the resolution limit of the photoresist.

6. The mask according to claim 1 , wherein each of said second transparent regions has a stripe shape.

7. The mask according to claim 1 , wherein said first transparent regions have long sides, and said second transparent regions disposed parallel to said long sides of said first transparent regions.

8. The mask according to claim 1 , wherein said first transparent regions have transverse sides, and said second transparent regions disposed parallel to said transverse sides of said first transparent regions.

9. The mask according to claim 1 , wherein said first transparent regions have transverse sides, and said second transparent regions disposed transverse to said transverse sides of said first transparent first regions.

10. The mask according to claim 1 , wherein said first transparent regions and said second transparent regions are utilized for fabricating the semiconductor components.

11. The mask according to claim 2 , wherein said number of said second transparent regions is at least two.

12. A mask for fabricating semiconductor components, comprising:

first transparent regions for determining a position of structures to be generated on the semiconductor components; and

second transparent regions, in conjunction with said first transparent regions, defining a size and a shape of the structures, said second transparent regions disposed outside of said first transparent regions.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 30, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036723/0021 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 8, 2015
From: QIMONDA AG
To: INFINEON TECHNOLOGIES AG
Reel/Frame 035623/0001 →