RF circuits including transistors having strained material layers
Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.
1. A circuit for processing an RF signal comprising at least one FET to which the RF signal is applied, the at least one FET comprising:
a semiconductor substrate including at least one planarized layer;
a channel region including at least one strained channel layer disposed on the at least one planarized layer thereby defining an interface therebetween, the at least one strained channel layer having a distal zone away from the interface, wherein the substrate, the interface, and the at least one strained channel layer are characterized at least in part by an impurity gradient having a value substantially equal to zero in the distal zone; and
a gate electrode;
wherein the substrate comprises SiGe.
2. A circuit for processing an RF signal comprising at least one FET to which the RF signal is applied, the at least one FET comprising:
a semiconductor substrate including at least one planarized layer;
a channel region including at least one strained channel layer disposed on the at least one planarized layer thereby defining an interface therebetween, the at least one strained channel layer having a distal zone away from the interface, wherein the substrate, the interface, and the at least one strained channel layer are characterized at least in part by an impurity gradient having a value substantially equal to zero in the distal zone; and
a gate electrode;
wherein the at least one planarized layer comprises relaxed SiGe disposed on compositionally graded SiGe.
3. A circuit for processing an RF signal comprising at least one FET to which the RF signal is applied, the at least one FET comprising:
a semiconductor substrate including at least one planarized layer;
a channel region including at least one strained channel layer disposed on the at least one planarized layer thereby defining an interface therebetween, the at least one strained channel layer having a distal zone away from the interface, wherein the substrate, the interface, and the at least one strained channel layer are characterized at least in part by an impurity gradient having a value substantially equal to zero in the distal zone; and
a gate electrode;
wherein the at least one planarized layer comprises relaxed SiGe disposed on Si.
4. A circuit for processing an RF signal comprising at least one FET to which the RF signal is applied, the at least one FET comprising:
a semiconductor substrate including at least one planarized layer;
a channel region including at least one strained channel layer disposed on the at least one planarized layer thereby defining an interface therebetween, the at least one strained channel layer having a distal zone away from the interface, wherein the substrate, the interface, and the at least one strained channel layer are characterized at least in part by an impurity gradient having a value substantially equal to zero in the distal zone; and
a gate electrode;
wherein the substrate comprises a buried insulating layer.
5. A circuit for processing an RF signal comprising at least one FET to which the RF signal is applied, the at least one FET comprising:
a semiconductor substrate including at least one planarized layer;
a channel region including at least one strained channel layer disposed on the at least one planarized layer thereby defining an interface therebetween, the at least one strained channel layer having a distal zone away from the interface, wherein the substrate, the interface, and the at least one strained channel layer are characterized at least in part by an impurity gradient having a value substantially equal to zero in the distal zone; and
a gate electrode;
wherein the channel region comprises n-type conductivity.
6. A circuit for processing an RF signal comprising at least one FET to which the RF signal is applied, the at least one FET comprising:
a semiconductor substrate including at least one planarized layer;
a channel region including at least one strained channel layer disposed on the at least one planarized layer thereby defining an interface therebetween, the at least one strained channel layer having a distal zone away from the interface, wherein the substrate, the interface, and the at least one strained channel layer are characterized at least in part by an impurity gradient having a value substantially equal to zero in the distal zone; and
a gate electrode;
wherein the channel region comprises p-type conductivity.
7. A circuit for processing an RF signal comprising at least one FET to which the RF signal is applied, the at least one FET comprising:
a semiconductor substrate including at least one planarized layer;
a channel region including at least one strained channel layer disposed on the at least one planarized layer thereby defining an interface therebetween, the at least one strained channel layer having a distal zone away from the interface, wherein the substrate, the interface, and the at least one strained channel layer are characterized at least in part by an impurity gradient having a value substantially equal to zero in the distal zone; and
a gate electrode;
wherein the FET comprises an interdigitated structure.
8. A circuit for processing an RF signal comprising at least one FET to which the RF signal is applied, the at least one FET comprising:
a semiconductor substrate including at least one planarized layer;
a channel region including at least one strained channel layer disposed on the at least one planarized layer thereby defining an interface therebetween, the at least one strained channel layer having a distal zone away from the interface, wherein the substrate, the interface, and the at least one strained channel layer are characterized at least in part by an impurity gradient having a value substantially equal to zero in the distal zone; and
a sate electrode;
wherein an excess carrier supply region is disposed substantially adjacent to the channel region.
9. A circuit for processing an RF signal comprising at least one FET to which the RF signal is applied, the at least one FET comprising:
a semiconductor substrate including at least one planarized layer;
a channel region including at least one strained channel layer disposed on the at least one planarized layer thereby defining an interface therebetween, the at least one strained channel layer having a distal zone away from the interface, wherein the substrate, the interface, and the at least one strained channel layer are characterized at least in part by an impurity gradient having a value substantially equal to zero in the distal zone; and
a gate electrode;
wherein an excess carrier supply region is disposed substantially adjacent to the channel region and is formed at least in part by implantation of at least one impurity.