Selectively applying resolution enhancement techniques to improve performance and manufacturing cost of integrated circuits

1. A method for applying resolution enhancement techniques (RETs) selectively to a layout of an integrated circuit, the method comprising:

receiving the layout of the integrated circuit, wherein receiving the layout involves receiving the layout of the integrated circuit in one of a GDS II stream format and an OpenAccess database format;

identifying a plurality of critical regions within the layout based on an analysis of one or more of, timing, dynamic power, and off-state leakage current;

performing a first set of aggressive RET operations on the plurality of critical regions; and

performing a second set of less aggressive RET operations on other non-critical regions of the layout, wherein the non-critical regions correspond to areas in the layout outside the plurality of critical regions.

2. The method of claim 1 , further comprising marking the plurality of critical regions of the layout for subsequent processing steps.

3. The method of claim 1 , wherein a critical region in the plurality of critical regions can include one or more of:

a critical transistor;

a critical net;

an area within a halo of a critical net; and

an area within a halo of a critical transistor.

4. The method of claim 1 ,

wherein the first set of aggressive RET operations can include, alternating phase shifting, model-based OPC, assist features, and attenuated phase shifting; and

wherein the second set of less aggressive RET operations can include, biasing line widths and rule-based OPC.

5. The method of claim 1 , wherein identifying the plurality of critical regions involves identifying transistors that are located on critical paths in the integrated circuit which affect timing of the integrated circuit.

6. The method of claim 1 ,

wherein performing the first set of aggressive RET operations involves decreasing gate lengths of the critical transistors to reduce delay through the critical transistors; and

wherein performing the second set of less aggressive RET operations involves adjusting gate lengths of the other non-critical transistors to limit static power consumption of the other non-critical transistors caused by off-state leakage current.

7. The method of claim 1 , wherein performing the first set of aggressive RET operations involves applying RETs to gates of the critical transistors.

8. The method of claim 7 , wherein applying RETs to the gates of the critical transistors involves applying optical proximity correction to gates of the critical transistors.

9. The method of claim 7 , wherein applying RETs to the gates of the critical transistors involves using phase shifters on a phase shifting mask to bias gates of the critical transistors so that the critical transistors have a different gate length than the other non-critical transistors in the layout.

10. An integrated circuit created through a process that applies resolution enhancement techniques (RETs) selectively to a layout of an integrated circuit, the process comprising:

receiving the layout of the integrated circuit, wherein receiving the layout involves receiving the layout of the integated circuit in one of a GDS II stream format and an OpenAccess database format;

identifying a plurality of critical regions within the layout based on an analysis of one or more of, timing, dynamic power, and off-state leakage current;

performing a first set of aggressive RET operations on the plurality of critical regions;

wherein performing the first set of aggressive RET operations involves decreasing gate lengths of the critical transistors to reduce delay through the critical transistors; and

performing a second set of less aggressive RET operations on other non-critical regions of the layout, wherein the non-critical regions correspond to areas in the layout outside the plurality of critical regions;

wherein performing the second set of less aggressive RET operations involves adjusting gate lengths of the other non-critical transistors to limit static power consumption of the other non-critical transistors caused by off-state leakage current.

11. The integrated circuit of claim 10 , the process further comprising marking the plurality of critical regions of the layout for subsequent processing steps.

12. The integrated circuit of claim 10 , wherein a critical region in the plurality of critical regions can include one or more of:

a critical transistor;

a critical net;

an area within a halo of a critical net; and

an area within a halo of a critical transistor.

13. The integrated circuit of claim 10 ,

wherein the first set of aggressive RET operations can include, alternating phase shifting, model-based OPC, assist features, and attenuated phase shifting; and

wherein the second set of less aggressive RET operations can include, biasing line widths and rule-based OPC.

14. The integrated circuit of claim 10 , wherein identifying the plurality of critical regions involves identifying transistors that are located on critical paths in the integrated circuit which affect timing of the integrated circuit.

15. The integrated circuit of claim 10 ,

wherein performing the first set of aggressive RET operations involves decreasing gate lengths of the critical transistors to reduce delay through the critical transistors; and

wherein performing the second set of less aggressive RET operations involves adjusting gate lengths of the other non-critical transistors to limit static power consumption of the other non-critical transistors caused by off-state leakage current.

16. The integrated circuit of claim 10 , wherein performing the first set of aggressive RET operations involves applying RETs to gates of the critical transistors.

17. The integrated circuit of claim 16 , wherein applying RETs to the gates of the critical transistors involves applying optical proximity correction to gates of the critical transistors.

18. The integrated circuit of claim 16 , wherein applying RETs to the gates of the critical transistors involves using phase shifters on a phase shifting mask to bias gates of the critical transistors so that the critical transistors have a different gate length than the other non-critical transistors in the layout.