Semiconductor device using shallow trench isolation and method of fabricating the same
View Patent ↗A semiconductor device adopting shallow trench isolation for reducing an internal stress of a semiconductor substrate. The semiconductor device is composed of a semiconductor substrate provided with a trench for isolation, and an insulating film formed to cover the trench for relaxing an internal stress of the semiconductor substrate. The insulating film includes a first portion disposed to be opposed to a bottom of the trench, and a second portion disposed to be opposed to a side of the trench. A first thickness of the first portion is different from a second thickness of the second portion.
1. A semiconductor device comprising:
a semiconductor substrate provided with a trench for isolation; and
an insulating film formed in a single layer to cover said trench for relaxing an internal stress of said semiconductor substrate, wherein said insulating film includes:
a first portion disposed to be opposed to a bottom of said trench, and
a second portion disposed to be opposed to a side of said trench, and
wherein a first thickness of said first portion is different from a second thickness of said second portion.
2. The semiconductor device according to claim 1 , wherein said first thickness of said first portion is thinner than said second thickness of said second portion.
3. The semiconductor device according to claim 2 , further comprising another insulating film in said trench, wherein said another insulating film exerts a compressive stress on said semiconductor substrate, and
wherein said insulating film exerts a tensile stress on said semiconductor substrate.
4. The semiconductor device according to claim 2 , wherein said insulating film is formed of one selected from a group consisting of silicon nitride and silicon oxinitride.
5. A semiconductor device comprising:
a semiconductor substrate provided with a trench for isolation; and
an insulating film formed in a single layer to cover said trench for relaxing an internal stress of said semiconductor substrate, wherein said insulating film is opposed to a side of said trench bind is not opposed to a bottom of said trench.
6. The semiconductor device according to claim 5 , further comprising another insulating him in said trench, wherein said another insulating film exerts a compressive stress on said semiconductor substrate, and
wherein said insulating film exerts a tensile stress on said semiconductor substrate.
7. The semiconductor device according to claim 5 , wherein said insulating film is formed of one selected from a group consisting of silicon nitride and silicon oxinitride.
8. A semiconductor device comprising:
a semiconductor substrate provided with a trench for isolation;
a silicon oxide film formed to cover said trench; and
an insulating film formed in a single layer on said silicon oxide film, wherein said insulating film exerts a tensile stress on said semiconductor substrate, and
wherein said insulating film includes:
a first portion disposed to be opposed to a bottom of said trench, and
a second portion disposed to be opposed to a side of said trench, and
wherein a first thickness of said first portion is thinner than a second thickness of said second portion.
9. The semiconductor device according to claim 8 , wherein said insulating film is formed of one selected from a group consisting of silicon nitride and silicon oxinitride.
10. A semiconductor device comprising:
a semiconductor substrate provided with a trench for isolation;
a silicon oxide film formed to cover said trench; and
an insulating film disposed in a single layer on said silicon oxide film, wherein said insulating film is formed of one selected from a group consisting of silicon nitride and silicon oxinitride, and
wherein said insulating film includes:
a first portion disposed to be opposed to a bottom of said trench, and
a second portion disposed to the opposed to a side of said trench, and
wherein a first thickness of said first portion is thinner than a second thickness of said second portion.