Radiation hardening method for shallow trench isolation in CMOS
View Patent ↗A radiation-hardened STI process includes implanting a partially formed wafer with a fairly large dose (10 13 to 10 17 ions/cm 2 ) of a large atom group III element, such as B, Al, Ga or In at an energy between about 30 and 500 keV. The implant is followed by an implant of a large group V element, such as P, As, Sb, or Bi using similar doses and energies to the group III element. The group V element compensates the group III element. The combination of the two large atoms decreases the diffusivity of small atoms, such as B, in the implanted areas. Furthermore, the combination of the group III and group V elements in roughly equal proportions creates recombination sites and electron traps in the field oxide, resulting in a radiation hardened semiconductor device.
1. A radiation-hardened shallow trench isolation semiconductor method comprising implanting a trench with a fairly large dose (10 13 to 10 17 ions/cm 2 ) of a large atom group III element or compound after shallow trench formation, but before field oxidation.
2. The method of claim 1 further comprising implanting the trench with a fairly large dose (10 13 to 10 17 ions/cm 2 ) of a large atom group V element or compound after field oxidation, but before final gate oxidation, either before or after the group III element implant.
3. The method of claim 1 further comprising implanting the trench with a light dose (10 11 to 10 14 ions/cm 2 ) of a group III element or compound after field oxidation, but before final gate oxidation.
4. The method of claim 1 wherein the starting material in which the trench is formed is germanium epitaxy on silicon (Ge—Si).
5. The method of claim 1 wherein implanting the trench comprises implanting with an element or compound selected from the group including B, BF 2 , Al, Ga or In.
6. The method of claim 1 wherein implanting the trench comprises implanting at an energy between 30 and 1000 keV.
7. The method of claim 2 in which the additional implant comprises an implant of an element selected from the group including P, As, Sb, or Bi.
8. The method of claim 2 in which the additional implant is implanted at an energy between 30 and 1000 keV.
9. The method of claim 2 in which the ratio of the group III to the group V element is unequal to provide a controlled, net P-type doping in the implanted silicon region.
10. The method of claim 2 in which the ratio of the group III to the group V element is equal.
11. The method of claim 1 wherein implanting the trench comprises a group III implant made at an angle between 0 and 7 degrees from wafer normal into a P-well trench.
12. The method of claim 1 wherein implanting the trench comprises at least one high angle group III implant.
13. The method of claim 12 in which the high angle group III implant comprises four implants made at a 90 degree twist after each implant so that each of the four sides of the trench are implanted.
14. The method of claim 12 in which the high angle group III implant comprises at least one implant made at an angle between 7 and 60 degrees from wafer normal.
15. The method of claim 2 wherein implanting the trench comprises a group V implant made at an angle between 0 and 7 degrees from wafer normal into a P-well trench.
16. The method of claim 2 wherein implanting the trench comprises at least one high angle group V implant.
17. The method of claim 16 in which the high angle group V implant comprises four implants made at a 90 degree twist after each implant so that each of the four sides of the trench are implanted.
18. The method of claim 16 in which the high angle group V implant comprises at least one implant made at an angle between 7 and 60 degrees from wafer normal.
19. The method of claim 1 in which the starting material comprises bulk silicon.
20. The method of claim 1 in which the starting material comprises silicon-on-insulator (“SOI”).
21. The method of claim 1 in which the starting material comprises silicon-on-sapphire (“SOS”).
22. The method of claim 1 further comprising an additional implant taken from the group consisting of: group II, group III, group IV, group V, and group VI elements either singly or in combination in order to introduce electron traps in the field oxide while decreasing the diffusivity of small atom dopants in silicon.
23. The method of claim 22 , in which the additional implant comprises Si.
24. The method of claim 22 , in which the additional implant comprises Ge.
25. The method of claim 22 , in which the additional implant comprises Si and Ge.
26. The method of claim 22 , in which the additional implant comprises Cu, In, and Se.
27. The method of claim 22 , in which the additional implant comprises Zn and Se.
28. The method of claim 22 , in which the additional implant comprises Cd and Se.
29. The method of claim 22 , in which the additional implant comprises Zn and S.
30. The method of claim 22 , in which the additional implant comprises Cd and Te.
31. The method of claim 22 , in which the additional implant comprises Sn.
32. The method of claim 22 , in which group II, group III, group IV, group V, or group VI elements are incorporated in a starting material substrate using epitaxial growth methods.
33. A radiation-hardened shallow trench isolation semiconductor method comprising forming a trench wherein the starting material in which the trench is formed is germanium epitaxy on silicon (Ge—Si).
34. The method of claim 33 in which the concentration of germanium in silicon varies between about 10 17 to 10 21 atoms/cm 3 .
35. The method of claim 33 in which the concentration of germanium is maximized at the bottom of the trench.
36. A radiation-hardened shallow trench isolation semiconductor method comprising forming a trench wherein the starting material in which the trench is formed is silicon in which group II, group III, group IV, group V, or group VI elements are incorporated in a starting material substrate using epitaxial growth methods.
37. The method of claim 36 in which the concentration of the group II, group III, group IV, group V, or group VI elements is maximized at the bottom of the trench.