Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
View Patent ↗High quality epitaxial layers of monocrystalline oxide materials ( 24 ) can be grown overlying monocrystalline substrates ( 22 ) such as large silicon wafers. The monocrystalline oxide layer ( 24 ) comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer ( 28 ) of silicon oxide. The amorphous interface layer serves as a decoupling layer between the substrate and the buffer layer so that the substrate and the buffer is crystal-graphically, chemically, and dielectrically decoupled. In addition, high quality epitaxial accommodating buffer layers may be formed overlying vicinal substrates using a low pressure, low temperature, alkaline-earth metal-rich process.
1. A process for forming an epitaxial ABO 3 oxide layer overlying a monocrystalline substrate, the oxide layer comprising an alkaline earth metal A and a B metal, said process comprising:
providing a monocrystalline substrate;
establishing a temperature of said monocrystalline substrate within a range of from about 250° C. to about 450° C.;
exposing said monocrystalline substrate to a partial pressure of oxygen in the range of from about 1×10 −9 to about 8×10 −8 Torr; and
exposing said monocrystalline substrate to at least one source of said alkaline earth metal A and to at least one source of said metal B such that a ratio of said alkaline earth metal A to said metal B is greater than one.
2. The process of claim 1 , wherein said step of providing a monocrystalline substrate comprises providing a vicinal surface.
3. The process of claim 1 , wherein the step of exposing said monocrystalline substrate to a partial pressure of oxygen includes increasing said partial pressure of oxygen as a growth of the oxide layer increases.
4. The process of claim 1 , wherein the step of establishing includes setting said temperature within a range of from about 300° C. to about 400° C.
5. The process of claim 1 , wherein the step of providing a monocrystalline substrate comprises providing a substrate selected from the group consisting of silicon, germanium, and mixed silicon and germanium.
6. The process of claim 1 , wherein the epitaxial oxide layer is selected from one of alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, and alkaline earth metal tin-based perovskites.
7. The process of claim 1 , further comprising the step of forming an amorphous interface layer overlying said monocrystalline substrate and underlying the epitaxial oxide layer.
8. The process of claim 1 , wherein the step of exposing said monocrystalline substrate to a partial pressure of oxygen includes providing a partial pressure of oxygen in the range of about 5×10 −9 to about 5×10 −8 Torr.