IP Library › Granted Patent US 6,885,429
Granted Patent B2
US 6,885,429 · App. 10/301,627 · Granted Apr 26, 2005

System and method for automated focus measuring of a lithography tool

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,885,429
App. No.
10/301,627
Granted
Apr 26, 2005
Kind
B2
Abstract

A system and method are used to calibrate a focus portion of an exposure section of a lithography tool. A wafer is exposed so that a resulted or formed patterned image is tilted with respect to the wafer. The tilting can be imposed based on controlling a wafer stage to tilt the wafer or a reticle stage to tilt the reticle. The wafer is developed. Characteristics of the tilted patterned image are measured with a portion of the lithography tool to determine focus parameters of an exposure system. The portion can be an alignment system. The measuring step can measure band width and/or band location of the tilted patterned image. Sometimes, more than one patterned image is formed on the wafer, then the measuring step can measure distance between bands and shifting of the bands with respect to a central axis of the wafer. The focus parameters can be focus tilt errors and/or focus offset. The focus parameters are used to perform calibration. Calibration is done by either automatically or manually entering compensation values for the measured focus parameters into the lithography tool.

Claims (53)

1. A method of calibrating a lithography tool, the method comprising the steps of:

exposing a wafer so that a resultant patterned image is tilted with respect to the wafer;

developing the exposed wafer;

measuring characteristics of the tilted patterned image with a metrology portion of the lithography tool to determine focus parameters of an exposure system; and

using the focus parameters to perform calibration of the lithography tool.

2. The method of claim 1 , further comprising the step of determining focus tilt errors of the exposure system based on said measuring step.

3. The method of claim 1 , further comprising the step of determining focus offset of the exposure system based on said measuring step.

4. The method of claim 1 , wherein said measuring step comprises the step of measuring a band location of the tilted patterned image.

5. The method of claim 1 , further comprising the steps of determining focus offset and focus tilt errors of the exposure system based on said measuring step.

6. The method of claim 1 , further comprising the step of tilting a reticle stage holding the reticle to impose the tilt.

7. The method of claim 1 , further comprising the step of moving the wafer along a predetermined axis during said exposing step to form at least one additional tilted patterned image on the wafer.

8. The method of claim 7 , further comprising the step of determining focus tilt errors of the exposure system based on said measuring step.

9. The method of claim 7 , further comprising the step of determining a focus offset of the exposure system based on said measuring step.

10. The method of claim 7 , wherein said measuring step comprises the step of measuring a distance between the tilted patterned images.

11. The method of claim 7 , wherein said measuring step comprises the step of measuring a distance of a center axis of the tilted patterned images from a center axis of the wafer.

12. The method of claim 7 , further comprising the step of determining focus offset and focus tilt errors of the exposure system based on said measuring step.

13. The method of claim 7 , wherein said measuring step comprises the steps of:

measuring a distance between the tilted patterned images; and

measuring a distance of a center axis of the tilted patterned images from a center axis of the wafer.

14. A method comprising the steps of:

exposing a wafer positioned at an angle so as to create a band-shaped etch pattern on the wafer that is tilted with respect to the wafer;

developing the exposed wafer;

measuring characteristics of the patterned image with a wafer alignment system;

determining focus parameters based on said measuring step; and

calibrating a focus portion of an exposure section of a lithography tool based on said determining step.

15. The method of claim 14 , wherein said determining step comprises the step of determining focus tilt errors of the focus portion.

16. The method of claim 14 , wherein said determining step comprises the step of determining focus offset of the focus portion.

17. The method of claim 14 , wherein said measuring step comprises the step of measuring a band location of the tilted patterned image.

18. The method of claim 14 , wherein said determining step comprises the steps of:

determining focus offset of the focus portion; and

determining focus tilt errors of the focus portion.

19. The method of claim 14 , further comprising the step of tilting a reticle stage holding the reticle to impose the tilt.

20. A method comprising the steps of:

stepping a wafer along a predetermined axis

exposing the wafer at more than one point along the predetermined axis so that formed patterned images are tilted with respect to the wafer;

developing the wafer;

measuring characteristics of the patterned images with a wafer alignment system;

determining focus parameters based on said measuring step; and

calibrating a focus portion of an exposure section of a lithography tool based on said determining step.

21. The method of claim 20 , wherein said determining step comprises the step of determining focus tilt errors of the focus portion.

22. The method of claim 20 , wherein said determining step comprises the step of determining focus offset of the focus portion.

23. The method of claim 20 , wherein said measuring step comprises the step of measuring a distance between the tilted patterned images.

24. The method of claim 20 , wherein said measuring step comprises the step of measuring a distance of a center axis of the tilted patterned images from a center axis of the wafer.

25. The method of claim 20 , wherein said determining step comprises the steps of determining focus offset and focus tilt errors of the focus portion.

26. The method of claim 20 , wherein said measuring step comprises the steps of:

measuring a distance between the tilted patterned images; and

measuring a distance of a center axis of the tilted patterned images from a center axis of the wafer.

27. A method, comprising:

tilting a reticle stage holding a reticle to impose a tilt;

exposing a wafer so that a resultant patterned image is tilted with respect to the wafer;

developing the exposed wafer;

measuring characteristics of the tilted patterned image with a portion of the lithography tool to determine focus parameters of an exposure system; and

using the focus parameters to perform calibration of the lithography tool.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 5, 2004
From: LYONS, JOSEPH H.; WHELAN, JOSEPH G.
To: ASML HOLDING N.V.
Reel/Frame 014307/0242 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 19, 2003
From: ASML US, INC.
To: ASML HOLDING N.V.
Reel/Frame 013743/0510 →