IP Library Granted Patent US 7,218,491
Granted Patent B2
US 7,218,491 · App. 10/329,058 · Granted May 15, 2007

Electrostatic discharge protection unit including equalization

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Quick Facts
Patent No.
US 7,218,491
App. No.
10/329,058
Granted
May 15, 2007
Kind
B2
Abstract

An electrostatic discharge protection unit includes a channel, a passive filter, and an electrostatic discharge protection circuit. The passive filter and the electrostatic discharge protection circuit are formed on a substrate. The electrostatic discharge protection circuit couples the channel to the passive filter. A method includes, for a channel having a bandwidth determining the bandwidth, and generating a transfer function for a passive filter which when combined in series an electrostatic discharge protection circuit and the channel yields a combination transfer function which has a combination bandwidth that is greater than the channel transfer function bandwidth.

Claims (35)

1. An electrostatic discharge protection unit comprising:

a channel having a transfer function including a channel cutoff frequency, wherein the transfer function approximates a low pass filter transfer function;

a passive filter formed on a substrate, wherein the passive filter connected in series with a sampling unit and wherein the sampling unit includes an insulated gate field-effect transistor; and

an electrostatic discharge protection circuit formed on the substrate to couple the channel to the passive filter.

2. The electrostatic discharge protection unit of claim 1 , wherein the substrate comprises germanium.

3. An electrostatic discharge protection unit comprising:

a channel having a transfer function including a channel cutoff frequency, wherein the transfer function approximates a low pass filter transfer function;

a passive filter formed on a substrate, wherein the passive filter connected in series with a sampling unit and wherein the sampling unit includes a metal oxide/nitride oxide-metal capacitor; and

an electrostatic discharge protection circuit formed on the substrate to couple the channel to the passive filter.

4. The electrostatic discharge protection unit of claim 3 , wherein the substrate comprises silicon-on-sapphire.

5. A circuit comprising:

a frequency dependent transmission line having a transfer function that approximates a low pass filter transfer function, the frequency dependent transmission line coupled to one or more electrostatic discharge sensitive devices formed on a substrate;

an electrostatic discharge protection circuit formed on the substrate; and

a passive filter formed on the substrate, the passive filter having no direct-current path, the passive filter to couple the electrostatic discharge protection circuit to at least one of the one or more electrostatic discharge sensitive devices, and wherein the passive filter includes a filter having only one energy storage element connected in series with a sampling unit.

6. The circuit of claim 5 , wherein the only one energy storage element comprises a capacitor.

7. The circuit of claim 6 , wherein the capacitor comprises a metal-oxide-metal capacitor.

8. The circuit of claim 7 , wherein the substrate comprises silicon.

9. A method comprising:

determining the bandwidth for a channel having a frequency dependent transfer function; and

generating a transfer function for a passive filter which when combined in series an electrostatic discharge protection circuit and the channel yields a combination transfer function which has a combination bandwidth that is greater than the channel transfer function bandwidth.

10. The method of claim 9 , wherein generating the transfer function for the passive filter comprises generating the transfer function to block direct-current.

11. A method comprising:

determining the bandwidth for a channel having a frequency dependent transfer function; and

generating a transfer function for a passive filter which when combined in series an electrostatic discharge protection circuit and the channel yields a combination transfer function which has a combination bandwidth that is greater than the channel transfer function bandwidth,

wherein generating the transfer function for the passive filter comprises generating the transfer function for the passive filter that connects in series with a sampling unit transfer function.

12. The method of claim 11 , wherein determining the bandwidth for the channel includes the frequency dependent transfer function of the channel having a cutoff frequency and a transfer function that approximates a low pass filter transfer function.

13. The method of claim 11 , wherein the combined transfer function has a magnitude that is substantially flat at frequencies less than a cutoff frequency for the combined transfer function.

14. The method of claim 13 , wherein the magnitude of the combined transfer function is less than a magnitude for the frequency dependent transfer function of the channel at frequencies less than the cutoff frequency for the combined transfer function.

15. A circuit comprising:

a frequency dependent transmission line having a transfer function that approximates a low pass filter transfer function, the frequency dependent transmission line coupled to one or more electrostatic discharge sensitive devices formed on a substrate;

an electrostatic discharge protection circuit formed on the substrate; and

a passive filter formed on the substrate, the passive filter having no direct-current path, the passive filter to couple the electrostatic discharge protection circuit to at least one of the one or more electrostatic discharge sensitive devices, wherein the passive filter includes a filter having only one energy storage element connected in series with a sampling unit.

16. The circuit of claim 15 , wherein the only one energy storage element comprises a capacitor.

17. The circuit of claim 16 , wherein the capacitor comprises a metal-oxide-metal capacitor.

18. The circuit of claim 15 , wherein the substrate comprises silicon.

Assignments (8)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 4, 2013
From: INTEL CORPORATION
To: MICRON TECHNOLOGY, INC.
Reel/Frame 030747/0001 →