Structure and method for fabricating semiconductor microresonator devices
View Patent ↗High quality epitaxial layers of monocrystalline materials ( 26 ) can be grown overlying monocrystalline substrates ( 22 ) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer ( 24 ) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer ( 28 ) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy and epitaxial growth of single crystal silicon onto single crystal oxide materials. A microresonator device is formed overlying the monocrystalline substrate. Portions or an entirety of the microresonator device can also overly the accommodating buffer layer, or the monocrystalline material layer.
1. A microresonator device, comprising:
a monocrystalline silicon substrate;
an amorphous oxide material in contact with the monocrystalline substrate;
a monocrystalline metal oxide selected from the group consisting of alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, gadolinium oxide and mixtures thereof contacting the amorphous oxide material;
a first electro-optical waveguide overlying the monocrystalline silicon substrate;
a second electro-optical waveguide overlying the monocrystalline silicon substrate; and
a first resonator overlying the monocrystalline silicon substrate, said first resonator separated from said first waveguide by a first gap and separated from said second waveguide by a second gap.
2. The microresonator device of claim 1 , further comprising:
a first electrode and a second electrode operable to facilitate a change in an index of refraction of said first electro-optical waveguide by an application of a voltage across said first electrode and said second electrode.
3. The microresonator device of claim 1 , further comprising:
a first electrode and a second electrode operable to facilitate an injection of current into said first resonator to thereby produce an onset of gain.
4. The microresonator device of claim 1 , further comprising:
a pathogen attractor overlying said first resonator.
5. The microresonator device of claim 1 , further comprising:
a second resonator overlying the monocrystalline silicon substrate, said second resonator separated from said first resonator by a third gap and separated from said second waveguide by a fourth gap.
6. The microresonator device of claim 1 , further comprising:
a third waveguide overlying the monocrystalline silicon substrate; and
a second resonator overlying the monocrystalline silicon substrate, said second resonator being separated from said first waveguide by a third gap and separated from said third waveguide by a fourth gap.
7. A microresonator device, comprising:
a monocrystalline silicon substrate;
an amorphous oxide material in contact with the monocrystalline substrate;
a monocrystalline metal oxide selected from the group consisting of alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, gadolinium oxide and mixtures thereof contacting the amorphous oxide material;
a first waveguide overlying the monocrystalline silicon substrate;
a second waveguide overlying the monocrystalline silicon substrate;
a first resonator overlying the monocrystalline silicon substrate, said first resonator being separated from said first waveguide by a first gap and separated from said second waveguide by a second gap; and
an electro-optical layer overlying the monocrystalline silicon substrate, said electro-optical layer filling in the first gap and the second gap.
8. The microresonator device of claim 7 , further comprising:
a first electrode and a second electrode operable to facilitate a change in an index of refraction of said first waveguide by an application of a voltage across said first electrode and said second electrode.
9. The microresonator device of claim 8 , further comprising:
a second resonator overlying the monocrystalline silicon substrate, said second resonator being separated from said first resonator by a third gap and separated from said second waveguide by a fourth gap,
wherein said electro-optical layer fills said third gap and said fourth gap.
10. The microresonator device of claim 8 , further comprising:
a third waveguide overlying the monocrystalline silicon substrate; and
a second resonator overlying the monocrystalline silicon substrate, said second resonator being separated from said first waveguide by a third gap and separated from said third waveguide by a fourth gap,
wherein said electro-optical layer fills said third gap and said fourth gap.
11. A microresonator device, comprising:
a monocrystalline silicon substrate;
an amorphous oxide material in contact with the monocrystalline substrate;
a monocrystalline metal oxide selected from the group consisting of alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, gadolinium oxide and mixtures thereof contacting the amorphous oxide material;
a first waveguide overlying the monocrystalline silicon substrate;
a second waveguide overlying the monocrystalline silicon substrate;
a first resonator overlying the monocrystalline silicon substrate, said resonator being separated from said first waveguide by a first gap and separated from said second waveguide by a second gap; and
a first electrode and a second electrode operable to facilitate an injection of current in said first resonator to thereby produce an onset of gain.
12. The microresonator device of claim 11 , wherein said microresonator device further includes:
a second resonator overlying the monocrystalline silicon substrate, said second resonator being separated from said first resonator by a third gap and separated from said second waveguide by a fourth gap.
13. The microresonator device of claim 11 , wherein said microresonator device further includes:
a third waveguide overlying the monocrystalline silicon substrate; and
a second resonator overlying the monocrystalline silicon substrate, said second resonator being separated from said first waveguide by a third gap from and separated from said third waveguide by a fourth gap.
14. A microresonator device, comprising:
a silicon-on-insulator substrate;
an amorphous oxide material in contact with a monocrystalline top silicon layer of the silicon-on-insulator substrate;
a monocrystalline metal oxide selected from the group consisting of alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, gadolinium oxide and mixtures thereof contacting the amorphous oxide material;
a first waveguide overlying said silicon-on-insulator substrate;
a second waveguide overlying said silicon-on-insulator substrate; and
a resonator including
a GaAs seed layer overlying the monocrystalline perovskite oxide material,
a compound semiconductor material layer overlying said GaAs seed layer to thereby provide a gain medium for said resonator, and
a top electrode and a bottom electrode operable to facilitate an injection of current into said compound semiconductor material layer to thereby produce an onset of gain.
15. The microresonator device of claim 14 , wherein said resonator further includes:
an ohmic contact layer formed within at least a portion of said compound semiconductor material layer to provide a position for said bottom electrode.
16. The microresonator device of claim 14 , wherein said resonator further includes:
an ohmic contact layer formed within at least a portion of said compound semiconductor material layer to provide a position for said top electrode.