Optical waveguide structure and method for fabricating the same
View Patent ↗An optical waveguide structure ( 10 ) is provided. The optical waveguide structure ( 10 ) has a monocrystalline substrate ( 12 ), an amorphous interface layer ( 14 ) overlying the monocrystalline substrate ( 12 ) and an accommodating buffer layer ( 16 ) overlying the amorphous interface layer ( 14 ). An optical waveguide layer ( 20 ) overlies the accommodating buffer layer ( 16 ).
1. An optical waveguide structure comprising:
a monocrystalline substrate;
an amorphous oxide material in contact with the monocrystalline substrate;
a monocrystalline metal oxide layer selected from the group consisting of alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, gadolinium oxide and mixtures thereof contacting the amorphous oxide material; and
an optical waveguide layer overlying said metal oxide layer,
said structure further comprising a cladding layer overlying said metal oxide layer, said optical waveguide layer disposed at least partially within said cladding layer.
2. The optical waveguide structure of claim 1 , further comprising an optical buffer layer overlying said metal oxide layer and underlying said optical waveguide layer.
3. The optical waveguide structure of claim 1 , wherein said optical waveguide layer is disposed within a window formed in said cladding layer.
4. The optical waveguide structure of claim 1 , wherein said cladding layer overlies said optical waveguide layer.
5. The optical waveguide structure of claim 1 , said monocrystalline substrate comprising one of silicon, germanium, a combination of silicon and germanium, a combination of silicon and carbon, a combination of silicon, germanium and carbon, and a silicon-on-insulator.
6. The optical waveguide structure of claim 2 , wherein said optical buffer layer comprises a dielectric material that has an index of refraction smaller than an index of refraction of a material that comprises said optical waveguide layer.
7. The optical waveguide structure of claim 6 , wherein said optical waveguide layer comprises a dielectric material having a first index of refraction and said optical buffer layer comprises a dielectric material having a second index of refraction and a difference between said first index of refraction and said second index of refraction is at least 0.1%.
8. The optical waveguide structure of claim 2 , wherein said optical buffer layer comprises one of SrTiO 3 , BaTiO 3 , Sr x Ba 1-x TiO 3 , Sr x Zr 1-x TiO 3 , where (0<x<1), PbTiO 3 , Pb x La 1-x (Zr y Ti 1-y )O 3 , where (0.7<x<1.0, 0<y<1.0), Pb(Mg 1/3 Nb 2/3 )O 3 , KNbO 3 , LiNbO 3 , LiTaO 3 , Sr x Ba 1-x Nb 2 O 6 , Pb x Ba 1-x Nb 2 O 6 , Bi 4 Ti 3 O 12 , Pb 2 KNb 5 O 15 , K 3 Li 2 Nb 5 O 15 , and substituted derivatives thereof.
9. The optical waveguide structure of claim 1 , wherein said optical waveguide layer comprises one of BaTiO 3 , PbTiO 3 , Pb x La 1-x (Zr y Ti 1-y )O 3 , where (0.7<x<1.0, 0<y<1.0), Pb(Mg 1/3 Nb 2/3 )O 3 , KNbO 3 , LiNbO 3 , LiTaO 3 , Sr x Ba 1-x Nb 2 O 6 , Pb x Ba 1-x Nb 2 O 6 , Bi 4 Ti 3 O 12 , Pb 2 KNb 5 O 15 , K 3 Li 2 Nb 5 O 15 , and substituted derivatives thereof.
10. The optical waveguide structure of claim 1 , wherein said cladding layer comprises a dielectric material that has an index of refraction that is smaller than an index of refraction of a material that comprises said optical waveguide layer.
11. The optical waveguide structure of claim 10 , wherein said optical waveguide layer comprises a dielectric material having a first index of refraction and said cladding layer comprises a dielectric material having a second index of refraction and a difference between said first index of refraction and said second index of refraction is at least 0.1%.
12. The optical waveguide structure of claim 1 , wherein said cladding layer comprises one of SrTiO 3 , BaTiO 3 , Sr x Ba 1-x TiO 3 , Sr x Zr 1-x TiO 3 , where (0<x<1), PbTiO 3 , Pb x La 1-x (Zr y Ti 1-y )O 3 , where (0.7<x<1.0, 0<y<1.0), Pb(Mg 1/3 Nb 2/3 ) 3 , KNbO 3 , LiNbO 3 , LiTaO 3 , Sr x Ba 1-x Nb 2 O 6 , Pb x Ba 1-x Nb 2 O 6 , Bi 4 Ti 3 O 12 , Pb 2 KNb 5 O 15 , K 3 Li 2 Nb 5 O 15 , and substituted derivatives thereof.
13. The optical waveguide structure of claim 1 , said monocrystalline substrate comprising silicon and said amorphous oxide comprising a silicon oxide.
14. The optical waveguide structure of claim 2 , wherein said optical buffer layer has a first lattice constant and said metal oxide layer has a second lattice constant, said second lattice constant being substantially matched to said first lattice constant.
15. The optical waveguide structure of claim 2 , wherein said optical waveguide layer has a first lattice constant and said optical buffer layer has a second lattice constant, said second lattice constant being substantially matched to said first lattice constant.
16. The optical waveguide structure of claim 1 , wherein said amorphous oxide has a thickness in the range of about 0.5 to 5 nm.
17. n optical waveguide structure comprising:
a monocrystalline substrate;
an amorphous interface layer overlying said monocrystalline substrate;
an accommodating buffer layer overlying said amorphous interface layer; and
an optical waveguide layer overlying said accommodating buffer layer,
said optical waveguide structure further comprising a cladding layer comprising one of SrTiO 3 , BaTiO 3 , Sr x Ba 1-x TiO 3 , Sr x Zr 1-x TiO 3 , where (0<x<1), PbTiO 3 , Pb x La 1-x (Zr y Ti 1-y )O 3 , where (0.7<x<1.0, 0<y<1.0), Pb(Mg 1/3 Nb 2/3 )O 3 , KNbO 3 , LiNbO 3 , LiTaO 3 , Sr x Ba 1-x Nb 2 O 6 , Pb x Ba 1-x Nb 2 O 6 , Bi 4 Ti 3 O 12 , Pb 2 KNb 5 O 15 , K 3 Li 2 Nb 5 O 15 , and substituted derivatives thereof overlying said accommodating buffer layer, said optical waveguide layer disposed at least partially within said cladding layer.