Self-aligned contact areas for sidewall image transfer formed conductors
View Patent ↗A method and structure for forming a sidewall image transfer conductor having a contact pad includes forming an insulator to include a recess, depositing a conductor around the insulator, and etching the conductor to form the sidewall image transfer conductor, wherein the conductor remains in the recess and forms the contact pad and the recess is perpendicular to the sidewall image transfer conductor.
1. A process for forming a sidewall conductor having a contact pad comprising:
forming an insulating mandrel on an upper surface of a substrate such that said insulating mandrel has a sidewall substantially perpendicular to said upper surface of said substrate;
forming a recess in said sidewall in a direction substantially parallel to said upper surface of said substrate;
depositing a conductor on said upper surface of said substrate and around said insulating mandrel, such that said conductor is formed on said sidewall of said insulating mandrel; and
etching said conductor to form said sidewall conductor along said sidewall, wherein said conductor remains in said recess and forms said contact pad and said recess is perpendicular to said sidewall conductor.
2. The process in claim 1 , wherein said recess is formed to have a width smaller than twice a thickness of said sidewall conductor.
3. The process in claim 1 , wherein said contact pad is formed to have a width greater than that of said sidewall conductor.
4. The process in claim 1 , wherein said recess comprises an indent.
5. The process in claim 1 , wherein said recess comprises two outdents.
6. The process in claim 1 , wherein said contact pad is formed to have an upper surface planar with that of said insulator and said sidewall conductor.
7. The process in claim 1 , wherein said contact pad is formed to have uniform unsloped upper surface.
8. A process for forming a conductor having a contact pad, said process comprising:
forming an insulating mandrel on an upper surface of a substrate such that said insulating mandrel has a sidewall substantially perpendicular to said upper surface of said substrate;
forming a recess in said sidewall of said insulating mandrel in a direction substantially parallel to said upper surface of said substrate;
depositing a conductor on said upper surface of said substrate and around said insulating mandrel, such that said conductor is formed on said sidewall of said insulating mandrel; and etching said conductor to leave said conductor along said sidewall, such that said conductor remains in said recess and forms said contact pad.
9. The process in claim 8 , wherein said recess is formed to have a width smaller than twice a thickness of the portion of said conductor that remains after said etching process.
10. The process in claim 8 , wherein said contact pad is formed to have a width greater than that of the portion of said conductor that remains after said etching process.
11. The process in claim 8 , wherein said recess comprises an indent.
12. The process in claim 8 , wherein said recess comprises two outdents.
13. The process in claim 8 , wherein said contact pad is formed to have an upper surface planar with that of said insulator and said conductor.
14. The process in claim 8 , wherein said contact pad is formed to have a uniform unsloped upper surface.
15. A process for forming a conductor having a contact pad, said process comprising: forming an insulating mandrel on an upper surface of a substrate such that said insulating mandrel has a sidewall substantially perpendicular to said upper surface of said substrate; forming a recess in said sidewall of said insulating mandrel in a direction substantially parallel to said upper surface of said substrate, wherein said recess comprises an indent in said sidewall and said recess is perpendicular to said sidewall; depositing a conductor on said upper surface of said substrate and around said insulating mandrel, such that said conductor is formed on said sidewall of said insulating mandrel; and etching said conductor to leave said conductor along said sidewall, such that said conductor remains in said recess and forms said contact pad.
16. The process in claim 15 , wherein said recess is formed to have a width smaller than twice a thickness of the portion of said conductor that remains after said etching process.
17. The process in claim 15 , wherein said contact pad is formed to have a width greater than that of the portion of said conductor that remains after said etching process.
18. The process in claim 15 , wherein said recess comprises two outdents.
19. The process in claim 15 , wherein said contact pad is formed to have an upper surface planar with that of said insulator and said conductor.
20. The process in claim 15 , wherein said contact pad is formed to have a uniform, unsloped upper surface.