Barrier layer and method of depositing a barrier layer
View Patent ↗A barrier layer is deposited on a substrate having a recess by sputtering tantalum in a nitrogen atmosphere. A flow of the nitrogen is selected to deposit mixed phase bcc/βTa, and sputter ions are sufficiently energetic to cause re-sputtering of deposited material from the base of the recess to its sidewall or sidewalls.
1. A method of depositing a barrier layer on a substrate having a recess,comprising sputtering tantalum in a nitrogen atmosphere wherein the flow of nitrogen is selected to deposit mixed phase bcc/βTa and wherein sputter ions are sufficiently energetic to cause re-sputtering of deposited material from the base of the recess to a sidewall or sidewalls of the recess.
2. The method as claimed in claim 1 wherein a nitrogen partial pressure is in the range of 10% to 30% of total pressure.
3. The method as claimed in claim 2 wherein the substrate is negatively biased.
4. The method as claimed in claim 3 wherein the substrate is negatively biased between −50 and −500 volts.
5. The method as claimed in claim 3 wherein the substrate is negatively biased at between −150 and −250 volts.
6. The method as claimed in claim 1 wherein the substrate is negatively biased.
7. The method as claimed in claim 6 wherein the substrate is negatively baised at between −50 and −500 volts.
8. The method as claimed in claim 6 wherein the substrate is negatively baised at between −150 and −250 volts.
9. The method as claimed in claim 1 wherein a resistivity of the barrier layer deposited at the base of the recess is in the range of 50 -150 μohm cm.
10. The method as claimed in claim 1 wherein the material from the base is re-sputtered onto the sidewall or sidewalls in a nitrogen containing atmosphere.
11. A method of depositing a barrier layer on a substrate having a recess, comprising sputtering tantalum in a nitrogen atmosphere wherein the flow of nitrogen is selected to deposit mixed phase bcc/βTa and wherein sputter ions are sufficiently energetic to cause re-sputtering of deposited material from the base of the recess to a sidewall or sidewalls of the recess;
wherein the substrate is negatively biased at between −150 and −250 volts; and
wherein a resistivity of the barrier layer deposited at the sidewall or sidewalls is higher than that of the barrier layer deposited at the base of the recess.
12. The method as claimed in claim 11 wherein a nitrogen partial pressure is in the range of 10% to 30% of total pressure.