IP Library Granted Patent US 7,217,645
Granted Patent B2
US 7,217,645 · App. 10/372,392 · Granted May 15, 2007

Method for manufacturing semiconductor device and electronic device and method for calculating connection condition

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Quick Facts
Patent No.
US 7,217,645
App. No.
10/372,392
Granted
May 15, 2007
Kind
B2
Abstract

Solder is connected to the electrodes of the circuit board by using a temperature profile with a constant fusion temperature, a connection interface strength evaluation test is carried out on the soldered joints to obtain an appropriate reflow range free of decreases in the strength at the connection interface. On the basis of the appropriate reflow range obtained and using as the basis the chemical compound thickness which is determined uniquely by heat load, an appropriate reflow range in an optional temperature profile with one temperature peak is obtained. By carrying out connection in this appropriate reflow range, soldered joints can be obtained without decreases in the connection interface strength in the large-scale production stage.

Claims (15)

1. A method for calculating a connection condition, comprising the steps of:

carrying out solder connection by a solder by changing a connection condition for connecting bumps of an electronic part to electrodes on an electronic circuit board, thereby forming soldered joints;

conducting a connection strength evaluation test on said soldered joints to thereby obtain a connection condition free of fracture at an interface between said solder and said electrodes; and

transforming said connection condition free of fracture at the interface between said solder and said electrodes, by using a thickness of a chemical compound at a connection interface determined uniquely by heat load as a standard into an optional connection condition with the same chemical compound thickness and with one temperature peak to thereby obtain a generalized connection condition.

2. A method for calculating a connection condition according to claim 1 , further comprising a step of transforming said connection condition free of fracture at the interface between said solder and said electrodes, by using heat load as a standard into an optional connection condition with heat load remaining the same to thereby obtain a generalized connection condition.

3. A method for calculating a connection condition according to claim 2 , further comprising the step of transforming said connection condition free of fracture at the interface between said solder and said electrodes, by using said heat load as the standard into an optional connection condition with one temperature peak and with the same heat load to thereby obtain a generalized connection condition.

4. A method for calculating a connection condition according to claim 1 , further comprising:

deriving a diffusion constant by Arrhenius plot after obtaining the thickness of the chemical compound; and

transforming an optional profile with one peak into a profile at constant temperature.

5. A method for calculating a connection condition according to claim 1 , further comprising:

a step of conducting a shear strength evaluation test on the solder bumps; and

a step of deriving an appropriate reflow range in constant temperature profile after the step of conducting the shear strength evaluation test.

6. A method for calculating a connection condition according to claim 1 , wherein said carrying out solder connection is performed at a constant reflow temperature; and wherein said transforming is performed to transform said connection condition free of fracture at the interface between said solder and said electrodes, determined in connection with said solder connection carried out at said constant reflow temperature, to said optional connection condition with said one temperature peak to thereby obtain said generalized connection condition.

7. A method for calculating a connection condition according to claim 1 , wherein said carrying out solder connection is performed at a constant reflow temperature.

8. A method for calculating a connection condition according to claim 7 , wherein bumps of electronic parts are connected to electrodes on a plurality of electronic circuit boards, respectively, using different temperature reflow profiles in connection with respective electronic circuit boards, each of which different reflow temperature profiles has a constant reflow temperature; and said connection strength evaluation test is conducted on soldered joints of said plurality of electronic circuit boards.

Assignments (3)
MERGER/CHANGE OF NAME Recorded Aug 31, 2011
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 026837/0505 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 6, 2007
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORP.
Reel/Frame 020098/0527 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 7, 2003
From: YAMASHITA, SHIRO; HARADA, MASAHIDE; YAMAMOTO, KENICHI; YAMADA, MUNEHIRO; KIMOTO, RYOSUKE
To: HITACHI, LTD.
Reel/Frame 014040/0582 →