Resin-molded semiconductor device
View Patent ↗In a leadframe for an LGA package, a lead member is pressed downward to form a land lead with a half-cut portion and a land portion. The land portion, whose bottom will be a land electrode, is inclined at a predetermined angle and the bottom of the land portion is made lower than that of a lead. Thus, in a resin molding process using a seal sheet, the land electrode is forced into, and strongly adhered to, the seal sheet when pressure is applied through dies, and no resin encapsulant reaches the land electrode. As a result, no resin bur will be left on the land electrode of the land lead.
1. A resin-molded semiconductor device, comprising:
a die pad;
a semiconductor chip mounted on the die pad;
a first group of leads, one end of each said lead of the first group extending toward the die pad, part of the bottom of the lead of the first group being used as a land electrode of a first group;
a second group of leads, one end of each said lead of the second group extending toward the die pad and being closer to the die pad than the end of each said lead of the first group is, part of the bottom of the lead of the second group being used as a land electrode of a second group;
a metal fine wires electrically connecting electrode pads on the semiconductor chip to respective first and second groups of leads of the leadframe; and
a resin encapsulant molding region where the semiconductor chip, the metal fine wires, the land electrode of the first group and the land electrode of the second group are sealed,
wherein the first and second group of land electrodes are arranged in two lines,
wherein the lead of the second group has the bottom of each said land electrode of the second group being lower than the bottom of each said land electrode of the first group, and
wherein the land electrode of the second group is inclined downward to the land electrode of the first group.
2. The resin-molded semiconductor device of claim 1 , wherein the lead of the second group is inclined at an angle between 3 and 15 degrees with the land electrode of the first group.
3. The resin-molded semiconductor device of claim 1 , wherein the upper surface of each said lead of the second group is greater in area than the lower surface thereof.
4. The resin-molded semiconductor device of claim 1 , wherein the surface of the die pad has a protruding portion and a semiconductor chip is mounted on the protruding portion.
5. The resin-molded semiconductor device of claim 1 , wherein a groove is formed in the surface or the bottom surface of the die pad.
6. The resin-molded semiconductor device of claim 1 , wherein a groove is formed in the surface of each said lead of the first group.
7. The resin-molded semiconductor device of claim 1 , wherein the outer edge of each said lead of the first group is thinner than the other portion thereof.