Semiconductor processing system and method
Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.
1 . A method to deposit a film in a processing chamber, comprising:
(a) introducing a first plurality of precursors to deposit a thin layer;
(b) either
triggering a flash lamp to generate thermal energy to modify the deposited layer; or
triggering a plasma source to generate a plasma energy to modify the deposited layer; or
triggering a flash lamp to generate thermal energy and triggering a plasma source to generate a plasma energy to modify the deposited layer.
2 . The method of claim 1 , further comprising a step a1, after step a, of:
a1. Purging the first precursors.
3 . The method of claim 1 , wherein the step b further comprising the introduction of a second plurality of precursors.
4 . The method of claim 3 , further comprising a step b1, after step b, of:
b1. Purging the second precursors.
5 . The method of claim 1 , further comprising a plurality of the steps a-b until a desired film thickness is reached.
6 . The method of claim 2 , further comprising a plurality of the steps a-b until a desired film thickness is reached.
7 . The method of claim 4 , further comprising a plurality of the steps a-b1 until a desired film thickness is reached.
8 . The method of claim 1 , wherein the step a comprises a plasma energy in the deposition process.
9 . The method of claim 1 , wherein the first plurality of precursors in steps a comprises CVD precursors.
10 . The method of claim 3 , wherein the second plurality of precursors in steps b comprises process gases, selected from a group consisting of nitrogen, oxygen, hydrogen, ammonia, NF 3 , silane, ozone, argon.
11 . The method of claim 3 , wherein the second plurality of precursors in steps b comprises CVD precursors.
12 . A method to deposit a film in a processing chamber, comprising:
(a) deposit a thin layer using a plasma assisted process; and
(b) triggering a flash lamp to generate thermal energy to modify the deposited layer.
13 . The method of claim 12 , further comprising a step a1, after step a, of:
a1. Purging the first precursors.
14 . The method of claim 12 , wherein the step b further comprising the introduction of a second plurality of precursors, and further comprising a step b1, after step b, of:
b1. Purging the second precursors.
15 . The method of claim 12 , further comprising a plurality of the steps a-b until a desired film thickness is reached.
16 . A method to deposit a film in a processing chamber, comprising:
(a) deposit a thin layer using a flash lamp assisted process; and
(b) triggering a plasma source to generate plasma energy to modify the deposited layer.
17 . The method of claim 16 , further comprising a step a1, after step a, of:
a1. Purging the first precursors.
18 . The method of claim 16 , wherein the step b further comprising the introduction of a second plurality of precursors, and further comprising a step b1, after step b, of:
b1. Purging the second precursors.
19 . The method of claim 16 , further comprising a plurality of the steps a-b until a desired film thickness is reached.
20 . The method of claim 16 , wherein the step a comprises a plasma energy in the deposition process.