Protection circuit protecting against voltage irregularities
View Patent ↗Protection circuits ( 1 ) to be located between power supplies ( 2 ) and further circuitries ( 20,30 ) for protecting further circuitries ( 20,30 ) against voltage irregularities and comprising main transistors ( 7 ) coupled to switching circuits ( 10 ) for rendering main transistors ( 7 ) operative/non-operative can be made more allround by providing them with comparators ( 11 ) for controlling gate voltages of main transistors ( 7 ) via switches ( 12,13 ) to get protection against small negative voltage pulses and voltage fluctuations. Said switches ( 12,13 ) comprise two switches ( 12,13 ) for interrupting a reference voltage generated by a reference voltage source and for supplying a nearby ground voltage to said gate. A diode ( 14 ) between switch ( 13 ) and gate allows negative voltages at said gate for simplifying the introduction of further stages. Thick oxide transistors ( 15 ) protect further circuitries ( 20,30 ) and main transistors ( 7 ) against large negative voltage pulses. Capacitors ( 16 ) and resistors ( 17 ) coupled parallelly to thick oxide transistors ( 15 ) protect against large negative voltage pulses and reverse polarity. Serial transistors ( 21 ) are coupled anti-serially to main transistors ( 7 ) to get protection against large positive voltage pulses.
1. Protection circuit ( 1 ) to be located between a power supply ( 2 ) and further circuitry ( 20 , 30 ) for protecting said further circuitry ( 20 , 30 ) against voltage irregularities and comprising on input ( 3 , 4 ) to be coupled to said power supply ( 2 ) and an output ( 5 , 6 ) to be coupled to said further circuitry ( 20 , 30 ) and a main transistor ( 7 ) of which a first serial electrode is coupled to said input ( 3 ) and of which a second serial electrode is coupled to said output ( 5 ) and of which a control electrode is coupled to a switching circuit ( 10 ) for rendering said main transistor ( 7 ) operative/non-operative dependently upon an input voltage at said input ( 3 , 4 ), wherein the switching circuit ( 10 ) comprises a comparator ( 11 ) for comparing said input voltage at said input ( 3 , 4 ) with a threshold voltage (Vth) and for in dependence of comparison results controlling a control electrode voltage at said control electrode of said main transistor ( 7 ) by using at least one switch ( 12 , 13 ) to couple the control electrode to ground, or couple the control electrode to a higher reference voltage source, to switch the main transistor off or on.
2. Protection circuit ( 1 ) according to claim 1 , characterised in that said at least one switch ( 12 , 13 ) comprises a first switch ( 12 ), conductive paths of which being coupled to a reference voltage source (V 1 ) and to said control electrode of said main transistor ( 7 ), and comprises a second switch ( 13 ), conductive paths of which being coupled to ground and to said control electrode of said main transistor ( 7 ).
3. Protection circuit ( 1 ) according to claim 2 , characterised in that the switching circuit ( 10 ) comprises a diode ( 14 ) of which an anode is coupled to said control electrode of said main transistor ( 7 ) and of which a cathode is coupled to said second switch ( 13 ).
4. Protection circuit ( 1 ) according to claim 1 , wherein said comparator ( 11 ) comprises a hysteresis function.
5. Protection circuit ( 1 ) according to claim 1 , wherein the switching circuit ( 10 ) comprises a thick oxide transistor ( 15 ) of which a first serial path electrode is coupled to said input ( 3 ) and of which a second serial path electrode is coupled to said control electrode of said main transistor ( 7 ) and of which a control electrode is coupled to a further reference voltage source (V 2 ).
6. Protection circuit ( 1 ) according to claim 5 , wherein the switching circuit ( 10 ) comprises a capacitor ( 16 ) and a resistor ( 17 ) coupled in parallel across said first serial path electrode and said control electrode of said main transistor ( 7 ).
7. Protection circuit ( 1 ) according to claim 5 , wherein the output ( 5 ) of the protection circuit ( 1 ) is coupled to an input of said further circuitry ( 20 , 30 ) comprising a serial transistor ( 21 ) of which one of the serial path electrodes is coupled to said second serial path electrode of said main transistor ( 7 ) such that both serial path electrodes of both the main transistor ( 7 ) and the serial transistor ( 21 ) form an anti-serial path.
8. Protection circuit ( 1 ) according to claim 7 , wherein said further circuitry ( 20 , 30 ) comprises a voltage regulator ( 20 ) comprising said serial transistor ( 21 ).
9. Integrated circuit, wherein the integrated circuit comprises a protection circuit ( 1 ) according to claim 1 .
10. Device, wherein the device comprises a protection circuit ( 1 ) according to claim 1 .
11. Protection circuit ( 1 ) to be located between a power supply ( 2 ) and further circuitry ( 20 , 30 ) for protecting said further circuitry ( 20 , 30 ) against voltage irregularities and comprising an input ( 3 , 4 ) to be coupled to said power supply ( 2 ) and an output ( 5 , 6 ) to be coupled to said further circuitry ( 20 , 30 ) and a main transistor ( 7 ) of which a first serial electrode is coupled to said input ( 3 ) and of which a second serial electrode is coupled to said output ( 5 ) and of which a control electrode is coupled to a switching circuit ( 10 ) for rendering said main transistor ( 7 ) operative/non-operative dependently upon an input voltage at said input ( 3 , 4 ), wherein the switching circuit ( 10 ) comprises a comparator ( 11 ) for comparing said input voltage at said input ( 3 , 4 ) with a threshold voltage (Vth) and for in dependence of comparison results controlling a control electrode voltage at said control electrode of said main transistor ( 7 ) via at least one switch ( 12 , 13 ) said at least one switch ( 12 , 13 ) comprising a first switch ( 12 ), conductive paths of which are coupled to a reference voltage source (V 1 ) and to said control electrode of said main transistor ( 7 ), and a second switch ( 13 ), conductive paths of which are coupled to ground and to said control electrode of said main transistor ( 7 ), the switching circuit ( 10 ) comprising a diode ( 14 ) of which an anode is coupled to said control electrode of said main transistor ( 7 ) and of which a cathode is coupled to said second switch ( 13 ).
12. Protection circuit ( 1 ) according to claim 11 , wherein said comparator ( 11 ) comprises a hysteresis function.
13. Protection circuit ( 1 ) according to claim 11 , wherein the switching circuit ( 10 ) comprises a thick oxide transistor ( 15 ) of which a first serial path electrode is coupled to said input ( 3 ) and of which a second serial path electrode is coupled to said control electrode of said main transistor ( 7 ) and of which a control electrode is coupled to a further reference voltage source (V 2 ).
14. Protection circuit ( 1 ) according to claim 13 , wherein the switching circuit ( 10 ) comprises a capacitor ( 16 ) and a resistor ( 17 ) coupled in parallel across said first serial path electrode and said control electrode of said main transistor ( 7 ).
15. Protection circuit ( 1 ) according to claim 13 , wherein the output ( 5 ) of the protection circuit ( 1 ) is coupled to an input of said further circuitry ( 20 , 30 ) comprising a serial transistor ( 21 ) of which one of the serial path electrodes is coupled to said second serial path electrode of said main transistor ( 7 ) such that both serial path electrodes of both the main transistor ( 7 ) and the serial transistor ( 21 ) form an anti-serial path.
16. Protection circuit ( 1 ) according to claim 15 , wherein said further circuitry ( 20 , 30 ) comprises a voltage regulator ( 20 ) comprising said serial transistor ( 21 ).
17. Integrated circuit, wherein the integrated circuit comprises a protection circuit ( 1 ) according to claim 11 .
18. Device, wherein the device comprises a protection circuit ( 1 ) according to claim 11 .