Conductive material for integrated circuit fabrication
View Patent ↗A conductive composition of titanium boronitride (TiB x N y ) is disclosed for use as a conductive material. The titanium boronitride is used as conductive material in the testing and fabrication of integrated circuits. For example, the titanium boronitride is used to construct contact pads such as inline pads, backend pads, sensors or probes. Advantages of embodiments of the titanium boronitride include reduced scratching, increased hardness, finer granularity, thermal stability, good adhesion, and low bulk resistivity. Exemplary methods of creating the titanium boronitride include a sputtering process and a plasma anneal process.
1. A method of testing a semiconductor structure comprising the acts of connecting a TiB x N y surface of a sensor to a contact on a semiconductor structure and performing tests as part of an integrated circuit fabrication process, wherein the x-factor is between about 0.1 and 10 and the y-factor is between about 0.2 and 5.
2. The method of claim 1 wherein the semiconductor structure is a memory device.
3. The method of claim 2 wherein the memory device is a dynamic random access memory.
4. The method of claim 2 wherein the memory device is a static memory.
5. The method of claim 1 further comprising the act of performing an inline test procedure.
6. The method of claim 5 further comprising the act of performing a calibration test procedure.
7. The method of claim 5 further comprising the act of performing a parametric test procedure.
8. The method of claim 1 further comprising the act of performing a backend test procedure.
9. The method of claim 8 further comprising the act of performing a burn-in test procedure.
10. The method of claim 8 further comprising the act of performing an environmental test procedure.
11. The method of claim 8 further comprising the act of performing a packaging test procedure.
12. The method of claim 1 wherein the act of connecting places the TiB x N y surface of the sensor in contact with a second TiB x N y surface on the semiconductor structure.
13. The method of claim 1 further comprising removing the sensor and bringing the sensor back into contact with the semiconductor structure.
14. The method of claim 1 wherein the x-factor is between about 0.5 to 2 and the y-factor is between about 0.2 to 2.
15. The method of claim 1 wherein the TiB x N y is TiBN 0.4 .
16. The method of claim 1 wherein the TiB x N y is TiB 0.4 N 0.6 .
17. A method comprising the acts of connecting a TiB x N y surface of a sensor to a contact on a semiconductor structure and performing tests as part of an integrated circuit fabrication process, wherein the x-factor is between about 0.1 and 10 and the y-factor is between about 0.2 and 5.
18. The method of claim 17 wherein the act of connecting connects to a memory device.
19. The method of claim 18 wherein the memory device is a dynamic random access memory.
20. The method of claim 18 wherein the memory device is a static memory.
21. The method of claim 17 further comprising the act of performing an inline test procedure.
22. The method of claim 21 further comprising the act of performing a calibration test procedure.
23. The method of claim 21 further comprising the act of performing a parametric test procedure.
24. The method of claim 17 further comprising the act of performing a backend test procedure.
25. The method of claim 24 further comprising the act of performing a burn-in test procedure.
26. The method of claim 24 further comprising the act of performing a environmental test procedure.
27. The method of claim 24 further comprising the act of performing a packaging test procedure.
28. The method of claim 17 wherein the act of connecting places the TiB x N y surface of the sensor in contact with a second TiB x N y surface on the semiconductor structure.
29. The method of claim 17 further comprising removing the sensor and bringing the sensor back into contact with the semiconductor structure.
30. The method of claim 17 wherein the x-factor is in the range of about 0.5 to 2 and wherein the y-factor is in the range of about 0.2 to 2.
31. The method of claim 17 wherein the TiB x N y is TiBN 0.4 .
32. The method of claim 17 wherein the TiB x N y is TiB 0.4 N 0.6 .