Method and system for improving short channel effect on a floating gate device
View Patent ↗A method and system for improving short channel effect on a floating gate device is disclosed. In one embodiment, a p-type implant is applied to a source side of the floating gate device. In addition, the present embodiment applies a p-type implant to a drain side of the floating gate device. The p-type implant to the drain side is performed at a different angle than the p-type implant to the source side. The p-type implant to the drain side is implanted to a greater depth than that of the p-type implant to the source side.
1. A method for improving short channel effect on a floating gate device comprising:
applying a p-type implant to a source side of the floating gate device; and
applying a p-type implant to a drain side of the floating gate device, wherein the p-type implant to the drain side is performed at a different angle than the p-type implant to the source side, wherein the p-type implant to the drain side and the p-type implant to the source side are implanted using substantially the same dosage; and wherein the p-type implant to the drain side is implanted to a greater depth than that of the p-type implant to the source side.
2. The method as recited in claim 1 wherein the p-type implant for the source side is a source side boron implant (SSBI).
3. The method as recited in claim 2 wherein SSBI is implanted at 20 kev.
4. The method as recited in claim 2 wherein the SSBI is deposited at a dose of 1.5×10 14 particles per square centimeter.
5. The method as recited in claim 1 wherein the p-type implant for the drain side is a drain side boron implant (DSBI).
6. The method as recited in claim 5 wherein the DSBI is implanted at a minimum of 50 kev.
7. The method as recited in claim 5 wherein the DSBI is implanted at an angle between 30 degrees and 60 degrees.
8. The method as recited in claim 5 wherein the DSBI is deposited at a dose of 1.5×10 14 particles per square centimeter.
9. A method for improving short channel effect on a floating gate device comprising:
forming a floating gate device above a semiconductor substrate, wherein the floating gate device has a first side-wall and a second side-wall and wherein the first side-wall corresponds to a source side and the second side-wall corresponds to a drain side;
applying a p-type implant to the source side of the floating gate device, wherein the p-type implant is deposited at a dose of 1.5×10 14 ±xyz particles per square centimeter; and
applying a p-type implant to the drain side of the floating gate device, wherein the p-type implant is deposited at a dose of 1.5×10 14 ±xyz particles per square centimeter, and wherein the p-type implant to the drain side is performed at a different angle than the p-type implant to the source side, and wherein the p-type implant to the drain side is implanted to a greater depth than that of the p-type implant to the source side.
10. The method as recited in claim 9 wherein the p-type implant for the source side is a source side boron implant (SSBI).
11. The method as recited in claim 10 wherein SSBI is implanted at 20 kev.
12. The method as recited in claim 9 wherein the p-type implant for the drain side is a drain side boron implant (DSBI).
13. The method as recited in claim 12 , wherein the DSBI is implanted at a minimum of 50 kev.
14. The method as recited in claim 12 wherein the DSBI is implanted at an angle between 30 degrees and 60 degrees.