Method of dividing a semiconductor wafer
View Patent ↗A method for dividing a semiconductor wafer which is covered by an opaque resin in a dicing process includes forming marks on the semiconductor wafer, wherein the marks are distinguished from electrodes which are formed on the semiconductor wafer. According to the method, in a dicing process, separating semiconductor chips from the semiconductor wafer can be precisely achieved.
1. A method for dividing a semiconductor wafer, the method comprising:
providing a semiconductor wafer which has an element area containing an integrated circuit formed thereon and grid lines which surround the element area;
forming an electrode on the element area which is electrically connected to the integrated circuit;
covering a surface of the semiconductor wafer with an opaque resin;
determining a location of the grid lines by penetrating an energy through the opaque resin; and
cutting the semiconductor wafer at the determined grid lines.
2. The method for dividing a semiconductor wafer according to claim 1 , wherein the determining the location of the grid lines uses a difference between materials of the semiconductor wafer and the opaque resin.
3. The method for dividing a semiconductor wafer according to claim 1 , wherein the determining the location of the grid lines uses a difference between thickness of the opaque resin on the grid lines and the element area.
4. A method for dividing a semiconductor wafer, the method comprising:
providing a semiconductor wafer which has an element area containing an integrated circuit formed thereon and grid lines which surround the element area;
forming an electrode on the element area which is electrically connected to the integrated circuit;
covering a surface of the semiconductor wafer with an opaque resin;
determining a location of the grid lines by reflective infrared ray at border portions between the surface of the semiconductor wafer and the opaque resin through the opaque resin; and
cutting the semiconductor wafer at the determined grid lines.
5. The method for dividing a semiconductor wafer according to claim 4 , wherein the determining the location of the grid lines uses a difference between materials of the semiconductor wafer and the opaque resin.
6. The method for dividing a semiconductor wafer according to claim 4 , wherein the determining the location of the grid lines uses a difference between thickness of the opaque resin on the grid lines and the element area.
7. A method for dividing a semiconductor wafer, the method comprising:
providing a semiconductor wafer which has an element area containing an integrated circuit formed thereon and grid lines which surround the element area;
forming an electrode on the element area which is electrically connected to the integrated circuit;
covering a surface of the semiconductor wafer with an opaque resin;
determining a location of the grid lines by reflective sonography at border portions between the surface of the semiconductor wafer end the opaque resin through the opaque resin; and
cutting the semiconductor wafer at the determined grid lines.
8. The method for dividing a semiconductor wafer according to claim 7 , wherein the determining the location of the grid lines uses a difference between materials of the semiconductor wafer and the opaque resin.
9. The method for dividing a semiconductor wafer according to claim 7 , wherein the determining the location of the grid lines uses a difference between thickness of the opaque resin on the grid lines and the element area.