Process for semiconductor apparatus including forming an insulator and a semiconductor film on the backside of the wafer and removing the semiconductor film from the backside

1. A method of producing a semiconductor device, comprising:

an insulating film forming step for forming an insulating film on at least the backside and a peripheral portion inclusive of a peripheral end portion of a semiconductor substrate;

a semiconductor film forming step for forming a semiconductor film on said insulating film, formed in said insulating film forming step, over both the backside and the peripheral end portion of the substrate and in a face side region of the substrate exclusive of said peripheral portion; and

a removing step for removing said semiconductor film formed in said semiconductor film forming step at least from the insulating film formed on the backside and said peripheral end portion of the substrate at a high etching rate relative to said insulating film beneath said semiconductor film.

2. A method of producing a semiconductor device as set forth in claim 1 , further comprising a device forming step for forming a plurality of semiconductor devices by processing at least said semiconductor film in said face side region, after said removing step.

3. A method of producing a semiconductor device as set forth in claim 1 , wherein said removing step is performed by use of a chemical liquid.

4. A method of producing a semiconductor device as set forth in claim 1 , wherein said removing step is performed such that with a wafer disposed with its backside up and rotated, a ring-shaped nitrogen gas is blown onto said wafer from the lower side, and a chemical liquid is supplied to a central portion of said backside of said wafer so as to flow on said backside of said wafer and flow around to a peripheral portion of the face side of said wafer.

5. A method of producing a semiconductor device as set forth in claim 3 , wherein said chemical liquid is a chemical liquid selected from the group consisting of acidic solutions containing at least one of hydrofluoric acid, nitric acid, acetic acid and organic acids, acidic mixed solutions containing aqueous hydrogen peroxide and ammonium fluoride in said acidic solution, and neutral solutions such as water.

6. A method of producing a semiconductor device comprising:

an insulating film forming step for forming an insulating film on at least a backside (rear) surface and a peripheral portion inclusive of a peripheral end portion of a semiconductor substrate;

a semiconductor film depositing step for depositing a semiconductor film on said backside (rear) portion and said peripheral portion of said insulating film formed in said insulating film forming step and in a face side (front) region exclusive of said peripheral portion; and

a removing step for removing said semiconductor film from said insulating film formed over said backside portion and from said peripheral end portion of the substrate, exclusive of said face side region for forming a plurality of semiconductor devices, by wet etching using a chemical liquid at a high etching selective rate relative to said insulating film beneath said semiconductor film.

7. A method of producing a semiconductor device as set forth in claim 6 , further comprising a device forming step for forming a plurality of semiconductor devices by processing at least said semiconductor film in said face side region, after said removing step.

8. A method of producing a semiconductor device as set forth in claim 6 , wherein said removing step is performed such that with a wafer disposed with its backside up and rotated, a ring-shaped nitrogen gas is blown onto said wafer from the lower side, end a chemical liquid is supplied to a central portion of said backside of said wafer so as to flow on said backside of said wafer and flow around to a peripheral portion of the face side of said wafer.

9. A method of producing a semiconductor device as set forth in claim 3 , wherein said chemical liquid is a chemical liquid selected from the group consisting of acidic solutions containing at least one of hydrofluoric acid, nitric acid, acetic acid and organic acids, acidic mixed solutions containing aqueous hydrogen peroxide and ammonium fluoride in said acidic solution, and neutral solutions such as water.

10. A method of producing a semiconductor device as set forth in claim 1 , wherein said insulating film forming step includes a step for forming the insulating film on an entire surface including said face side surface, backside surface and peripheral portion of the semiconductor substrate.

11. A method of producing a semiconductor device as set forth in claim 10 , wherein said semiconductor film depositing step includes a step for depositing the semiconductor film on an entire surface of said insulating film.

12. A method of producing a semiconductor device as set forth in claim 6 , wherein said insulating film forming step includes a step for forming the insulating film on an entire surface including said face side surface, backside surface and peripheral portion of the semiconductor substrate.

13. A method of producing a semiconductor device as set forth in claim 12 , wherein said semiconductor film depositing step includes a step for depositing the semiconductor film on an entire surface of said insulating film.

14. A method of producing a semiconductor device as set forth in claim 1 , wherein said etching rate is such that said semiconductor film is etched away from the insulating film formed on the backside and peripheral end portion of the substrate without any substantial etching of the insulating film.

15. A method of producing a semiconductor device as set forth in claim 14 , wherein a ratio for said etching rate between said insulating film and said semiconductor film is 1:100 or less.

16. A method of producing a semiconductor device as set forth in claim 15 , wherein said ratio is 1:6000.

17. A method of producing a semiconductor device as set forth in claim 6 , wherein said etching rate is such that said semiconductor film is etched away from the insulating film formed on the backside and peripheral end portion of the substrate without any substantial etching of the insulating film.

18. A method of producing a semiconductor device as set forth in claim 17 , wherein a ratio for said etching rate between said insulating film and said semiconductor film is 1:100 or less.

19. A method of producing a semiconductor device as set forth in claim 18 , wherein said ratio is 1:8000.

20. A method of producing a semiconductor device as set forth in claim 1 , wherein said semiconductor film is formed by a CVD method.

21. A method of producing a semiconductor device as set forth in claim 6 , wherein said semiconductor film is deposited by a CVD method.