IP Library Granted Patent US 6,943,650
Granted Patent B2
US 6,943,650 · App. 10/447,448 · Granted Sep 13, 2005

Electromagnetic band gap microwave filter

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,943,650
App. No.
10/447,448
Granted
Sep 13, 2005
Kind
B2
Abstract

A microwave filter is formed from an electromagnetic band gap structure. The electromagnetic band gap structure includes a periodic array of metal features ( 16, 42, 44, 50 ) formed within a dielectric matrix ( 14, 52 ). A defect feature ( 17, 48 ) is formed within the periodic array of metal features ( 16, 42, 44, 50 ) in order to create a pass band within a stop band region.

Claims (43)

1. An electromagnetic band gap filter, comprised of:

a dielectric matrix;

a lattice formed within said dielectric matrix, that has a stop

band response that includes zero frequency; and

a defect feature formed in said lattice, thereby forming a pass band within said stop band at a microwave frequency;

wherein said defect feature is comprised of a capacitor placed within said periodic lattice.

2. An electromagnetic band gap filter, comprised of:

a dielectric matrix;

a lattice formed within said dielectric matrix that has a stop

band response that includes zero frequency; and

a defect feature formed in said lattice, thereby forming a pass band within said band at a microwave frequency;

wherein said periodic lattice is comprised of a row of metallic rods

3. An electromagnetic band gap filter, comprised of:

a dielectric matrix;

a lattice formed within said dielectric matrix that has a stop

band response that includes zero frequency; and

a defect feature formed in said lattice, thereby forming a pass band within said band at a microwave frequency;

wherein said periodic lattice is comprised of a row of capacitors.

4. The filter of claim 3 , wherein said defect feature is comprised of a defect capacitor having a capacitance different from said capacitors forming the periodic lattice.

5. An electromagnetic band gap filter, comprised of:

a dielectric matrix;

a lattice formed within said dielectric matrix that has a stop

band response that includes zero frequency; and

a defect feature formed in said lattice, thereby forming a pass band within said band at a microwave frequency;

wherein said lattice is comprised of:

a row of metallic posts having alternating heights; and

a plurality of metallic plates placed proximal to the ends of each metal post in said row of metal posts, wherein said metal plates overlap thereby forming a periodic array of capacitors.

6. An electromagnetic band gap filter, comprised of:

a dielectric matrix;

a lattice formed within said dielectric matrix that has a stop

band response that includes zero frequency; and

a defect feature formed in said lattice, thereby forming a pass band within said band at a microwave frequency;

wherein said defect is comprised of an oversized metal plate formed in the periodic lattice.

7. An electromagnetic band gap filter, comprised of:

a dielectric matrix;

a lattice formed within said dielectric matrix that has a stop

band response that includes zero frequency; and

a defect feature formed in said lattice, thereby forming a pass band within said band at a microwave frequency;

wherein the periodic lattice couples a signal line to a ground line, thereby selectively rejecting signals propagating through said signal line and said ground line.

8. A microwave filter, comprised of:

lattice means to form an electromagnetic band gap structure within a dielectric matrix, thereby creating a transmission spectrum having a stop band that includes zero frequency; and

defect means to form a defect in said periodic metal lattice, thereby forming a pass band in said stop band at a microwave frequency;

wherein said lattice means is comprised of vias formed in said dielectric matrix.

Assignments (17)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE LISTED CHANGE OF NAME SHOULD BE MERGER AND CHANGE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0180. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 12, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 041354/0148 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 040652/0180 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0225 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →