Methods of forming strained-semiconductor-on-insulator finFET device structures
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
1. A method for forming a structure, the method comprising:
providing a substrate having a dielectric layer disposed thereon, and a first strained semiconductor layer disposed in contact with the dielectric layer; and
forming a fin-field-effect transistor on the substrate by:
patterning the first strained semiconductor layer to define a source region, a drain region, and at least one fin disposed between the source and the drain regions,
forming a dielectric layer, at least a portion of the dielectric layer being disposed over the fin, and
forming a gate over the dielectric layer portion disposed over the fin.
2. The method of claim 1 , wherein the first strained semiconductor layer comprises at least one of a group II, a group III, a group IV, a group V, or a group VI element.
3. The method of claim 1 , wherein the strained semiconductor layer is tensilely strained.
4. The method of claim 3 , wherein the strained semiconductor layer comprises tensilely strained silicon.
5. The method of claim 1 , wherein the strained semiconductor layer is compressively strained.
6. The method of claim 5 , wherein the strained semiconductor layer comprises compressively strained germanium.