Semiconductor devices having strained dual channel layers
A semiconductor structure includes a strain-inducing substrate layer having a germanium concentration of at least 10 atomic %. The semiconductor structure also includes a compressively strained layer on the strain-inducing substrate layer. The compressively strained layer has a germanium concentration at least approximately 30 percentage points greater than the germanium concentration of the strain-inducing substrate layer, and has a thickness less than its critical thickness. The semiconductor structure also includes a tensilely strained layer on the compressively strained layer. The tensilely strained layer may be formed from silicon having a thickness less than its critical thickness. A method for fabricating a semiconductor structure includes providing a substrate, providing a compressively strained semiconductor on the substrate, depositing a tensilely strained semiconductor adjacent the substrate until a thickness of a first region of the tensilely strained semiconductor is greater than a thickness of a second region of the tensilely strained semiconductor, forming a n-channel device on the first region, and forming a p-channel device on the second region.
1. A method for forming a semiconductor structure, the method comprising the steps of:
providing a substrate;
providing a compressively strained semiconductor on the substrate;
depositing a tensilely strained semiconductor over the compressively strained semiconductor in first and second regions such that the tensilely strained semiconductor in the first region has a thickness greater than a thickness of the tensilely strained semiconductor in the second region;
forming on the first region a n-channel device that primarily utilizes the tensilely strained semiconductor for the n-channel; and
forming on the second region a p-channel device that primarily utilizes the compressively strained semiconductor for the p-channel.
2. The method of claim 1 , wherein the substrate comprises germanium, the compressively strained semiconductor comprises germanium having a greater concentration than a concentration of the germanium of the substrate, and the tensilely strained semiconductor comprises silicon.
3. The method of claim 1 , wherein the thickness of the second region of the tensilely strained semiconductor is approximately 1 nm to 2 nm.
4. The method of claim 1 , wherein depositing the tensilely strained semiconductor comprises simultaneously depositing the second region of the tensilely strained semiconductor and a first portion of the thickness of the first region of the tensilely strained semiconductor, and subsequently depositing a second portion of the thickness of the first region of the tensilely strained semiconductor.
5. The method of claim 1 , wherein the substrate comprises a relaxed layer.
6. The method of claim 5 , wherein the relaxed layer comprises germanium.
7. A method for forming a semiconductor structure, the method comprising the steps of:
providing a substrate;
providing a compressively strained semiconductor on the substrate;
depositing a tensilely strained semiconductor over a first portion of the compressively strained semiconductor in a first region but not in a second region adjacent the first region; and
forming on the first region an n-channel device that primarily utilizes the tensilely strained semiconductor for the n-channel.
8. The method of claim 7 , further comprising the steps of:
depositing a tensilely strained semiconductor over a second portion of the compressively strained semiconductor in the second region, adjacent to the first region; and
forming on the second region a p-channel device that primarily utilizes the compressively strained semiconductor for the p-channel.
9. The method of claim 8 , wherein a thickness of the tensilely strained semiconductor in the first region is greater than a thickness of the tensilely strained semiconductor in the second region.
10. The method of claim 8 , wherein the thickness of the second region of the tensilely strained semiconductor is approximately 1 nm to 2 nm.
11. The method of claim 7 , wherein the substrate comprises germanium, the compressively strained semiconductor comprises germanium having a greater concentration than a concentration of the germanium of the substrate, and the tensilely strained semiconductor comprises silicon.
12. The method of claim 7 , wherein the substrate comprises a relaxed layer.
13. The method of claim 12 , wherein the relaxed layer comprises germanium.